H10P 90/129
By polishing
Official title: {by polishing}
H10P90/129 (By polishing) appears on 529 US grants and 692 published applications in this corpus.
Search patents in H10P- Granted patents
- 529
- Published applications
- 692
- Assignees
- 219
- Inventors
- 1,205
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 6 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 3 | 0 |
| 1998 | 11 | 0 |
| 1999 | 15 | 0 |
| 2000 | 11 | 0 |
| 2001 | 14 | 10 |
| 2002 | 16 | 16 |
| 2003 | 9 | 10 |
| 2004 | 6 | 15 |
| 2005 | 10 | 9 |
| 2006 | 7 | 20 |
| 2007 | 4 | 16 |
| 2008 | 8 | 25 |
| 2009 | 9 | 22 |
| 2010 | 13 | 27 |
| 2011 | 13 | 34 |
| 2012 | 17 | 27 |
| 2013 | 23 | 27 |
| 2014 | 27 | 32 |
| 2015 | 25 | 41 |
| 2016 | 30 | 29 |
| 2017 | 19 | 43 |
| 2018 | 33 | 27 |
| 2019 | 33 | 29 |
| 2020 | 24 | 35 |
| 2021 | 18 | 24 |
| 2022 | 23 | 51 |
| 2023 | 17 | 27 |
| 2024 | 33 | 37 |
| 2025 | 26 | 40 |
| 2026 | 12 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Method of cleaning silicon wafer, method of manufacturing silicon wafer, and silicon wafer22 Sep 2026US 12,745,582 B2Shin-Etsu Handotai Co., Ltd.
- Indium phosphide substrate and method for producing indium phosphide substrate15 Sep 2026US 12,740,431 B2JX Advanced Metals Corporation
- Polishing pad, double-side polishing device, and double-side polishing method for wafer11 Aug 2026US 12,703,059 B2Shin-Etsu Handotai Co., Ltd.
- SiC wafer having an end region with low concentrations of metal impurities and SiC epitaxial wafer28 Jul 2026US 12,696,509 B2Resonac Corporation
- Sic wafer and sic epitaxial wafer8 Oct 2026US 2026/0313999 A1Resonac Corporation
- Method of producing polishing composition17 Sep 2026US 2026/0275159 A1Fujimi Incorporated
- Polishing composition, concentrated liquid of polishing composition, and polishing method20 Aug 2026US 2026/0242648 A1Fujimi Incorporated
- System and method for chemical mechanical polishing13 Aug 2026US 2026/0233355 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Polishing compositions and methods of use thereof13 Aug 2026US 2026/0239907 A1Fujifilm Electronic Materials U.S.A., Inc.
Most cited
By later US patents
- Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad195US 5,972,792 AMicron Technology, Inc. · 1999
- Wafer backing member for mechanical and chemical-mechanical planarization of substrates123US 5,830,806 AMicron Technology, Inc. · 1998
- High surface quality GaN wafer and method of fabricating same116US 6,488,767 B1Advanced Technology Materials, Inc. · 2002
- Polishing apparatus98US 5,476,414 AEbara Corporation · 1995
- Chemical-mechanical polishing (CMP) method for controlling polishing rate using ionized water, and CMP apparatus89US 5,643,406 AKabushiki Kaisha Toshiba · 1997