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US 12,696,509 B2Granted
SiC wafer having an end region with low concentrations of metal impurities and SiC epitaxial wafer
AssigneeResonac Corporation
InventorsYumiko Nakamura, Yuzo Sasaki
Life of this patent
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Abstract
A SiC wafer according to the present embodiment includes an end region within 5 mm from an outer circumferential end, wherein, in the end region, the concentration of each of Ti, V and Zr is 5.0×1011 atoms/cm2 or less, the concentration of each of Cr, Ni, Cu, W, Mo and Mn is 1.0×1011 atoms/cm2 or less, and the concentration of each of B, Al and Fe is 5.0×1012 atoms/cm2 or less.
Claims10
A SiC wafer including an end region within 5 mm from an outer circumferential end,
- wherein, in the end region,
- the concentration of each of Ti, V and Zr is 5.0×1011 atoms/cm2 or less,
- the concentration of each of Cr, Ni, Cu, W, Mo and Mn is 1.0×1011 atoms/cm2 or less, and
- the concentration of each of B, Al and Fe is 5.0×1012 atoms/cm2 or less.
1 more element
Dependencies are inferred from the claim text.