H10P 90/128
By edge treatment
Official title: {by edge treatment, e.g. chamfering}
H10P90/128 (By edge treatment) appears on 241 US grants and 303 published applications in this corpus.
Search patents in H10P- Granted patents
- 241
- Published applications
- 303
- Assignees
- 128
- Inventors
- 673
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 4 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 7 | 0 |
| 2000 | 3 | 0 |
| 2001 | 7 | 3 |
| 2002 | 4 | 1 |
| 2003 | 2 | 4 |
| 2004 | 2 | 7 |
| 2005 | 5 | 4 |
| 2006 | 1 | 4 |
| 2007 | 3 | 9 |
| 2008 | 2 | 8 |
| 2009 | 3 | 16 |
| 2010 | 5 | 9 |
| 2011 | 5 | 13 |
| 2012 | 10 | 9 |
| 2013 | 8 | 7 |
| 2014 | 9 | 7 |
| 2015 | 7 | 13 |
| 2016 | 8 | 11 |
| 2017 | 15 | 17 |
| 2018 | 13 | 14 |
| 2019 | 17 | 23 |
| 2020 | 11 | 20 |
| 2021 | 13 | 14 |
| 2022 | 9 | 18 |
| 2023 | 12 | 16 |
| 2024 | 15 | 17 |
| 2025 | 15 | 17 |
| 2026 | 13 | 22 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Wafer processing method and device chip manufacturing method1 Oct 2026US 2026/0305271 A1Disco Corporation
- Method for manufacturing epitaxial wafer24 Sep 2026US 2026/0293620 A1Kabushiki Kaisha Toshiba
- Method of manufacturing silicon on insulator substrate20 Aug 2026US 2026/0247931 A1SK hynix Inc.
- Monocrystalline silicon wafer and forming method therefor20 Aug 2026US 2026/0247932 A1Shanghai Institute of Microsystem and Info. Tech., Chinese Academy of Sciences
Most cited
By later US patents
- Apparatus and method for chamfering wafer130US 6,267,648 B1Tokyo Seimitsu Co., Ltd. · 2001
- Method for etching damaged zones on an edge of a semiconductor substrate, and etching system112US 5,945,351 ASiemens Aktiengesellschaft · 1999
- Method for apparatus for polishing outer peripheral chamfered part of wafer86US 6,884,154 B2Shin-Etsu Handotai Co., Ltd. · 2005
- Fabrication process and fabrication apparatus of SOI substrate54US 5,876,497 ACanon Kabushiki Kaisha · 1999
- Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid50US 6,482,749 B1SEH America, Inc. · 2002