Method for manufacturing epitaxial wafer
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorShinya SATO
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Abstract
A method for manufacturing an epitaxial wafer according to an embodiment includes: covering a semiconductor wafer with a first film that suppresses epitaxial growth; obliquely polishing a bevel portion on a front surface side of the semiconductor wafer, thereby removing the first film on the bevel portion on the front surface side to form an outer peripheral slope on which a first layer of the semiconductor wafer is exposed; polishing a flat portion surrounded by the outer peripheral slope on the front surface side of the semiconductor wafer, thereby removing the first film on the flat portion to form a first surface on which the first layer of the semiconductor wafer is exposed; and forming a second layer on the first surface of the semiconductor wafer.
Claims20
A method for manufacturing an epitaxial wafer, the method comprising:
- covering a semiconductor wafer with a first film that suppresses epitaxial growth;
- polishing a bevel portion on a front surface side of the semiconductor wafer, thereby removing the first film on the bevel portion on the front surface side to form an outer peripheral slope on which a first layer of the semiconductor wafer is exposed;
- polishing a flat portion surrounded by the outer peripheral slope on the front surface side of the semiconductor wafer, thereby removing the first film on the flat portion to form a first surface on which the first layer of the semiconductor wafer is exposed;
- and
- forming a second layer on the first surface.
Dependencies are inferred from the claim text.