H10P 90/126
By chemical etching
Official title: {by chemical etching}
H10P90/126 (By chemical etching) appears on 371 US grants and 408 published applications in this corpus.
Search patents in H10P- Granted patents
- 371
- Published applications
- 408
- Assignees
- 218
- Inventors
- 944
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 6 | 0 |
| 2000 | 4 | 0 |
| 2001 | 9 | 3 |
| 2002 | 9 | 5 |
| 2003 | 2 | 7 |
| 2004 | 1 | 9 |
| 2005 | 6 | 11 |
| 2006 | 6 | 8 |
| 2007 | 7 | 15 |
| 2008 | 5 | 12 |
| 2009 | 3 | 12 |
| 2010 | 7 | 5 |
| 2011 | 7 | 3 |
| 2012 | 7 | 5 |
| 2013 | 7 | 11 |
| 2014 | 9 | 18 |
| 2015 | 11 | 25 |
| 2016 | 16 | 19 |
| 2017 | 17 | 17 |
| 2018 | 20 | 36 |
| 2019 | 31 | 27 |
| 2020 | 18 | 29 |
| 2021 | 21 | 27 |
| 2022 | 25 | 42 |
| 2023 | 20 | 21 |
| 2024 | 21 | 22 |
| 2025 | 21 | 13 |
| 2026 | 11 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Method for producing a detachment region in a solid-state body22 Sep 2026US 12,741,341 B2Siltectra GmbH
- Indium phosphide substrate and method for producing indium phosphide substrate15 Sep 2026US 12,740,431 B2JX Advanced Metals Corporation
- Donor substrate for the transfer of a thin layer and associated transfer method1 Sep 2026US 12,727,448 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Display device including a foldable display panel and a window of which a portion overlaps a folding area of the foldable display panel and electronic device including the same28 Jul 2026US 12,693,708 B2Samsung Display Co., Ltd.
- Substrate processing apparatus and method2 Jul 2026US 2026/0190909 A1Semes Co., Ltd.
- Wafer edge deposition for wafer level packaging28 May 2026US 2026/0150636 A1Lam Research Corporation
- Method for Micro-Patterning Silicon Carbide Seed Wafer for Crystal Growth14 May 2026US 2026/0136898 A1LEAP Semiconductor Corp.
- Gallium arsenide single crystal substrate and method of producing same16 Apr 2026US 2026/0103823 A1Sumitomo Electric Industries, Ltd.
- Bonding Layer with Metallization Features26 Feb 2026US 2026/0060079 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Process for surface treatment519US 4,857,137 AHitachi, Ltd. · 1989
- High surface quality GaN wafer and method of fabricating same116US 6,488,767 B1Advanced Technology Materials, Inc. · 2002
- Method of manufacturing semiconductor wafers95US 5,942,445 AShin-Etsu Handotai Co., Ltd. · 1999
- Apparatus for processing semiconductor wafers89US 3,964,957 AMonsanto Company · 1976
- Methods and compositions for the selective etching of silicon77US 5,431,777 AInternational Business Machines Corporation · 1995