Substrate processing apparatus and method

A substrate processing apparatus comprising:

• a support stand configured to rotate a substrate;
• an etching solution supplier configured to supply an etching solution to the substrate;
• a pure water supplier configured to supply pure water to the substrate;
• and
• a controller configured to control the support stand, the etching solution supplier, and the pure water supplier,
• wherein
• the substrate includes a first region, including an edge of the substrate, and a second region, including a center of the substrate, and
• the controller is further configured to control, while rotating the support stand at a second speed higher than a first speed, such that the pure water supplier discharges the pure water to the second region, thereby wetting a front surface of the substrate, to thereafter control, while rotating the support stand at the first speed, such that the etching solution supplier discharges the etching solution to the first region and the pure water supplier discharges the pure water to the second region, thereby performing etching in the first region while preventing etching in the second region, to thereafter control, while rotating the support stand at the second speed, such that the etching solution supplier discharges the etching solution to the second region, thereby etching a front surface of the substrate, and to thereafter control, while rotating the support stand at the second speed, such that the pure water supplier discharges the pure water to the second region, thereby rinsing the front surface of the substrate.

A substrate processing method comprising:

• providing a substrate processing apparatus including a support stand configured to rotate a substrate, a first chemical solution supplier configured to supply a first chemical solution to the substrate, and a second chemical solution supplier configured to supply a second chemical solution to the substrate;
• while rotating the support stand at a first speed, discharging, by the first chemical solution supplier, the first chemical solution to a first region of the substrate on the support stand and discharging, by the second chemical solution supplier, the second chemical solution to a second region of the substrate on the support stand, thereby performing etching in the first region while preventing etching in the second region;
• and
• while rotating the support stand at a second speed higher than the first speed, discharging, by the first chemical solution supplier, the first chemical solution to the second region of the substrate, thereby performing etching on a front surface of the substrate.