Bonding Layer with Metallization Features
AssigneeApplied Materials, Inc.
InventorYoocharn JEON
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Abstract
Methods and structures relating to bonding wafers using an aluminum nitride bonding layer with embedded metallization features. In some embodiments, the method may comprise forming a bonding layer on a first wafer where the bonding layer is formed of epitaxially grown aluminum nitride and where the first wafer is a silicon-based material and forming one or more metal features into the bonding layer on the first wafer. The first wafer may be hybrid bonded to a second wafer or die with one or more second metal features surrounded by a diffusion barrier layer. The one or more second metal features of the second wafer or die bonds to the one or more metal features of the first wafer. The diffusion barrier layer of the second wafer or die bonds, at least, to the bonding layer of the first wafer.
Claims20
A method for bonding, comprising:
- forming a bonding layer on a first wafer, wherein the bonding layer comprises aluminum nitride and wherein the first wafer is a silicon-based material;
- and
- forming one or more metal features into the bonding layer on the first wafer.
A heat spreader structure, comprising:
- a heat spreader layer;
- a bonding layer comprising aluminum nitride on the heat spreader layer;
- and
- one or more metal features embedded into the bonding layer comprising aluminum nitride.
A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for bonding wafers, the method comprising:
- forming a bonding layer on a first wafer, wherein the bonding layer comprises aluminum nitride and wherein the first wafer is a silicon-based material;
- and
- forming one or more metal features into the bonding layer on the first wafer.
Dependencies are inferred from the claim text.