Method of manufacturing semiconductor wafers
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsTadahiro Kato, Hisashi Masumura, Sadayuki Okuni, Hideo Kudo
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Abstract
According to the invention, the flatness and quality can be improved while simplifying the process even when large size wafers of 200 to 300 mm or above are processed. Basic steps involved are a slicing step E for obtaining thin disc-shape wafers by slicing, a chamfering step F for chamfering the sliced wafers, a flattening step G for flattening the chamfered wafers, an alkali etching step H for removing process damage layers from the flattened wafers, and a double-side polishing step K of simultaneously polishing the two sides of the etched wafers. If necessary, a plasma etching step is used in lieu of the flattening and etching steps G and H respectively.
Claims20
A method of manufacturing a semiconductor wafer comprising the steps of:
- flattening a thin disc-shaped wafer obtained right after slicing by surface grinding, and
- polishing the flattened wafer on both sides simultaneously.
A method of manufacturing a semiconductor wafer comprising the steps of:
- flattening a thin disc-shaped wafer obtained right after slicing by surface grinding or lapping;
- dry etching the flattened wafer using plasma to remove process damage layers from the flattened wafer and finely flatten the wafer, and
- polishing the flattened wafer on both sides simultaneously.
A method of manufacturing a semiconductor wafer comprising subjecting a thin disc-shaped wafer obtained right after slicing to plasma dry etching to remove process damage layers and flatten the wafer, and thereafter polishing the flattened wafer on both sides simultaneously.
Dependencies are inferred from the claim text.