H10P 50/692
Characterised by their composition
Official title: {characterised by their composition, e.g. multilayer masks or materials}
H10P50/692 (Characterised by their composition) appears on 2,139 US grants and 2,289 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,139
- Published applications
- 2,289
- Assignees
- 490
- Inventors
- 4,380
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 3 | 0 |
| 1982 | 4 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 7 | 0 |
| 1987 | 6 | 0 |
| 1988 | 5 | 0 |
| 1989 | 1 | 0 |
| 1990 | 5 | 0 |
| 1991 | 16 | 0 |
| 1992 | 8 | 0 |
| 1993 | 13 | 0 |
| 1994 | 17 | 0 |
| 1995 | 11 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 7 | 0 |
| 1999 | 8 | 0 |
| 2000 | 8 | 0 |
| 2001 | 29 | 9 |
| 2002 | 24 | 35 |
| 2003 | 29 | 26 |
| 2004 | 35 | 45 |
| 2005 | 29 | 49 |
| 2006 | 47 | 44 |
| 2007 | 22 | 40 |
| 2008 | 29 | 38 |
| 2009 | 18 | 27 |
| 2010 | 28 | 35 |
| 2011 | 30 | 33 |
| 2012 | 29 | 52 |
| 2013 | 38 | 64 |
| 2014 | 59 | 123 |
| 2015 | 141 | 214 |
| 2016 | 201 | 205 |
| 2017 | 203 | 243 |
| 2018 | 210 | 190 |
| 2019 | 177 | 180 |
| 2020 | 166 | 137 |
| 2021 | 134 | 77 |
| 2022 | 72 | 88 |
| 2023 | 67 | 97 |
| 2024 | 63 | 97 |
| 2025 | 73 | 81 |
| 2026 | 46 | 60 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor photoresist composition and method of forming patterns using the composition29 Sep 2026US 12,748,348 B2Samsung SDI.Co., Ltd.
- Protection of STI features22 Sep 2026US 12,745,614 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High selectivity, low stress, and low hydrogen carbon hardmasks in low-pressure conditions with wide gap electrode spacing15 Sep 2026US 12,735,785 B2Lam Research Corporation
- Composition for forming organic film, patterning process, and compound and polymer for forming organic film8 Sep 2026US 12,730,377 B2Shin-Etsu Chemical Co., Ltd.
- Base film agent and processing method for workpiece8 Oct 2026US 2026/0314287 A1Disco Corporation
- Method for producing semiconductor device and layered object for semiconductor device8 Oct 2026US 2026/0314322 A1Mitsui Chemicals, Inc.
- Method for manufacturing semiconductor device1 Oct 2026US 2026/0305267 A1Mitsubishi Electric Corporation
- Photoresist composition and method for manufacturing semiconductor device using the same24 Sep 2026US 2026/0288005 A1Samsung Electronics Co., Ltd.
- Frame mask for singulating wafers by plasma etching24 Sep 2026US 2026/0293563 A1UTAC Headquarters Pte. Ltd.
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method for integrated circuit patterning805US 9,184,054 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Frequency doubling using spacer mask774US 7,807,578 B2APPLIED Materials.Inc. · 2010
- Semiconductor substrate process using a low temperature deposited carbon-containing hard mask566US 7,323,401 B2APPLIED Materials.Inc. · 2008
- Semiconductor substrate process using an optically writable carbon-containing mask539US 7,429,532 B2APPLIED Materials.Inc. · 2008