H10P 50/68
Of insulating materials
Official title: of insulating materials
H10P50/68 (Of insulating materials) appears on 9 US grants and 47 published applications in this corpus.
Search patents in H10P- Granted patents
- 9
- Published applications
- 47
- Assignees
- 23
- Inventors
- 108
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 2 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 1 |
| 2020 | 1 | 1 |
| 2021 | 1 | 1 |
| 2022 | 1 | 2 |
| 2023 | 1 | 2 |
| 2024 | 0 | 3 |
| 2025 | 0 | 3 |
| 2026 | 3 | 31 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Methods to improve etch uniformity across a semiconductor substrate when etching with a hydrofluoric acid (HF) and nitric acid (HNO3) solution1 Sep 2026US 12,727,411 B2Tokyo Electron Limited
- Silicon nitride etching compositions and method7 Apr 2026US 12,595,413 B2Entegris, Inc.
- Method for producing decomposing/cleaning composition10 Feb 2026US 12,545,862 B2Resonac Corporation
- Silicon nitride etching composition and method11 Jul 2023US 11,697,767 B2Entegris, Inc.
- Compositions and methods for selectively etching silicon nitride films20 Dec 2022US 11,530,356 B2Entegris, Inc.
- Composition for wet etching and manufacturing method of semiconductor device using the composition8 Oct 2026US 2026/0314286 A1Samsung Electronics Co., Ltd.
- Wet-removable silicon-containing resist underlayer film-forming composition8 Oct 2026US 2026/0314341 A1Nissan Chemical Corporation
- Method of manufacturing treated substrate and method of manufacturing semiconductor17 Sep 2026US 2026/0282786 A1FUJIFILM Corporation
- Substrate processing method10 Sep 2026US 2026/0271644 A1Tokyo Electron Limited
- Method for producing light-receiving device3 Sep 2026US 2026/0262457 A1Shin-Etsu Handotai Co., Ltd.
Most cited
By later US patents
- Compositions and methods for etching silicon nitride-containing substrates3US 10,651,045 B2Entegris, Inc. · 2020
- Silicon nitride etching composition and method3US 11,053,440 B2Entegris, Inc. · 2021
- Silicon nitride etching composition and method1US 11,697,767 B2Entegris, Inc. · 2023
- Highly selective doped oxide etchant1US 8,512,587 B2Micron Technology, Inc. · 2013