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US 2026/0271644 A1Published application
Substrate processing method
AssigneeTokyo Electron Limited
InventorsRintaro HIGUCHI, Koji KAGAWA
Life of this patent
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Abstract
A substrate processing method includes a first etching process including supplying a first etching liquid to a substrate on which a gate electrode and a work function adjusting film that adjusts a work function of the gate electrode are formed, and etching the work function adjusting film. The first etching process includes supplying hydrofluoric acid, mixed solution of sulfuric acid and hydrogen peroxide (SPM), or mixed solution of ammonia and hydrogen peroxide (SC1) to the substrate as the first etching liquid.
Claims20
A substrate processing method comprising:
- a first etching process including:
- supplying a first etching liquid to a substrate on which a gate electrode and a work function adjusting film are formed, the work function adjusting film adjusting a work function of the gate electrode;
- and
- etching the work function adjusting film, wherein;
- the first etching process further includes:
- supplying hydrofluoric acid, mixed solution of sulfuric acid and hydrogen peroxide (SPM), or mixed solution of ammonia and hydrogen peroxide (SC1) to the substrate as the first etching liquid.
3 more elements
A substrate processing method comprising:
- an etching process including:
- supplying an etching liquid to a substrate on which a cerium carbide film is formed;
- and
- etching the cerium carbide film, wherein
- the etching process further includes:
- supplying hydrofluoric acid or mixed solution of sulfuric acid and hydrogen peroxide (SPM) to the substrate as the etching liquid.
3 more elements
Dependencies are inferred from the claim text.