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US 2026/0314286 A1Published application
Composition for wet etching and manufacturing method of semiconductor device using the composition
AssigneesSamsung Electronics Co., Ltd., Soulbrain Co., Ltd.
InventorsDai Hyun KIM, Jae Sung LEE, Mihyun PARK, Sang Won BAE
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Abstract
A composition for wet etching may include HF, a corrosion inhibitor, and an aprotic organic solvent having a dielectric constant of less than or equal to 60, The corrosion inhibitor may be a polycyclic fused ring compound in which a heterocyclic ring containing one or more S atoms therein is fused to an additional ring.
Claims20
A composition for wet etching, comprising HF;
- a corrosion inhibitor;
- and
- an aprotic organic solvent having a dielectric constant of less than or equal to 60,
- wherein the corrosion inhibitor is a polycyclic fused ring compound in which a heterocyclic ring containing one or more S atoms is fused to an additional ring.
1 more element
Dependencies are inferred from the claim text.