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US 11,697,767 B2Granted
Silicon nitride etching composition and method
AssigneeEntegris, Inc.
InventorsSteven Michael Bilodeau, SeongJin Hong, Hsing-Chen Wu, Min-Chieh Yang, Emanuel I. Cooper
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Abstract
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
Claims9
A composition comprising:
- (a) phosphoric acid;
- (b) at least one silane chosen from (i) alkylamino alkoxysilanes and (ii) alkylamino hydroxyl silanes, wherein said silane possesses at least one moiety chosen from alkoxy, hydroxyl, and fluoro;
- (c) a solvent comprising water;
- (d) a fluoride compound, provided that the fluoride compound is other than hexafluoro silicic acid;
- and
- (e) an alkyl amine or phosphate salt thereof,
- wherein the alkylamino alkoxysilane and alkylamino hydroxyl silane compounds are represented by the formulas
4 more elements
A composition comprising:
- (a) phosphoric acid;
- (b) N-(2-aminoethyl)-3-aminopropyl-silane-triol or (3-aminopropyl)silane triol;
- (c) a solvent comprising water,
- (d) a fluoride compound, provided that the fluoride compound is other than hexafluoro silicic acid;
- and
- (e) an alkyl amine or phosphate salt thereof,
- wherein the alkyl amine or phosphate salt thereof is present and is chosen from triethylamine or a dihydrogen phosphate salt thereof.
4 more elements
Dependencies are inferred from the claim text.