Method of manufacturing treated substrate and method of manufacturing semiconductor
AssigneesFUJIFILM Corporation, Fujifilm Electronic Materials U.S.A., Inc.
InventorsKoichi Sato, Atsushi Mizutani, Keeyoung Park
Life of this patent
Estimating the term…
Abstract
There are provided a method of manufacturing a treated substrate that can, in a substrate having on its surface at least two regions of a first region containing silicon and a second region made from a material different from that of the first region, suppress etching of the first region and achieve high etch selectivity between the two regions, and a method of manufacturing a semiconductor comprising the method of manufacturing a treated substrate. The method of manufacturing a treated substrate comprises a step 1 being a chemical solution treatment step, a step 2 being a cleaning step, and a step 3 being an etching step.
Claims20
A method of manufacturing a treated substrate, the method comprising:
- a step 1 of bringing a substrate and a chemical solution into contact, the substrate having on its surface at least two regions of a first region containing silicon and a second region made from a material different from that of the first region, the chemical solution containing a silicon-containing organic compound and a solvent;
- a step 2 of bringing the substrate having undergone the step 1 and an organic solvent into contact;
- and
- a step 3 of bringing the substrate having undergone the step 2 and a treatment solution containing at least one of hydrogen fluoride, potassium hydroxide, ammonia, tetramethylammonium hydroxide, or hydrogen peroxide into contact, to thereby etch the second region.
Dependencies are inferred from the claim text.