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US 11,053,440 B2Granted
Silicon nitride etching composition and method
AssigneeEntegris, Inc.
InventorsSteven M. Bilodeau, SeongJin Hong, Hsing-Chen Wu, Min-Chieh Yang, Emanuel I. Cooper
Life of this patent
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Abstract
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
Claims20
A composition consisting of:
- (a) phosphoric acid;
- (b) at least one silane chosen from (i) alkylamino alkoxysilanes and (ii) alkylamino hydroxyl silanes, wherein said silane possesses at least one moiety chosen from alkoxy, hydroxyl, and fluoro;
- (c) a solvent comprising water;
- and optionally
- (d) a fluoride compound, provided that the fluoride compound is other than hexafluoro silicic acid;
- (e) an alkyl amine or phosphate salt thereof
- (f) a surfactant,
- (g) a carboxylic acid compound, or
- (h) a dissolved silicate.
6 more elements
A composition consisting of:
- (a) phosphoric acid;
- (b) N-(2-aminoethyl)-3-aminopropyl-silane-triol or (3-aminopropyl)silane triol;
- (c) a solvent comprising water,
- and optionally
- (d) a fluoride compound, provided that the fluoride compound is other than hexafluoro silicic acid;
- (e) an alkyl amine or phosphate salt thereof
- (f) a surfactant,
- (g) a carboxylic acid compound, or
- (h) a dissolved silicate.
6 more elements
Dependencies are inferred from the claim text.