H10P 34/42
With electromagnetic radiation
Official title: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
H10P34/42 (With electromagnetic radiation) appears on 2,719 US grants and 2,952 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,719
- Published applications
- 2,952
- Assignees
- 709
- Inventors
- 4,932
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 6 | 0 |
| 1980 | 16 | 0 |
| 1981 | 21 | 0 |
| 1982 | 21 | 0 |
| 1983 | 36 | 0 |
| 1984 | 31 | 0 |
| 1985 | 34 | 0 |
| 1986 | 30 | 0 |
| 1987 | 28 | 0 |
| 1988 | 20 | 0 |
| 1989 | 18 | 0 |
| 1990 | 15 | 0 |
| 1991 | 13 | 0 |
| 1992 | 9 | 0 |
| 1993 | 9 | 0 |
| 1994 | 11 | 0 |
| 1995 | 7 | 0 |
| 1996 | 6 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 14 | 0 |
| 2000 | 12 | 0 |
| 2001 | 28 | 12 |
| 2002 | 39 | 34 |
| 2003 | 43 | 57 |
| 2004 | 46 | 86 |
| 2005 | 50 | 97 |
| 2006 | 66 | 76 |
| 2007 | 52 | 102 |
| 2008 | 50 | 113 |
| 2009 | 76 | 112 |
| 2010 | 93 | 104 |
| 2011 | 99 | 133 |
| 2012 | 100 | 114 |
| 2013 | 104 | 130 |
| 2014 | 121 | 127 |
| 2015 | 108 | 189 |
| 2016 | 141 | 144 |
| 2017 | 158 | 165 |
| 2018 | 130 | 152 |
| 2019 | 121 | 151 |
| 2020 | 154 | 157 |
| 2021 | 124 | 158 |
| 2022 | 115 | 118 |
| 2023 | 83 | 126 |
| 2024 | 84 | 111 |
| 2025 | 85 | 99 |
| 2026 | 74 | 85 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing a SiGe channel field effect transistor6 Oct 2026US 12,757,658 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Processing method of bonded wafer22 Sep 2026US 12,745,579 B2Disco Corporation
- Substrate processing method and substrate processing apparatus8 Sep 2026US 12,733,418 B2Tokyo Electron Limited
- Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium25 Aug 2026US 12,720,650 B2Kokusai Electric Corporation
- Method for laser-based singulating of microchips on structured substrates25 Aug 2026US 12,721,078 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Method of epitaxial growth and method of manufacturing semiconductor device using the same1 Oct 2026US 2026/0305192 A1Rnr Lab Inc.
- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
- Method for manufacturing semiconductor device1 Oct 2026US 2026/0305213 A1Resonac Corporation
- Substrate processing method and substrate processing apparatus17 Sep 2026US 2026/0273651 A1Tokyo Electron Limited
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Method of fabricating oxide semiconductor device3,948US 7,468,304 B2Canon Kabushiki Kaisha · 2008
- Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator1,026US 7,601,984 B2Canon Kabushiki Kaisha · 2009