Substrate processing method and substrate processing apparatus

A substrate processing apparatus, comprising:

• a transfer device including a transfer arm, the transfer device being for transferring a substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having waviness;
• a laser processing device for performing laser processing of the first main surface of the substrate;
• and
• a control circuit configured to control the laser processing device,
• wherein the control circuit performs:
• acquiring map data of the waviness of the first main surface before the laser processing;
• setting a processing area in at least a portion of the first main surface based on the map data of the waviness;
• moving a radiation point of a laser beam in the processing area;
• and
• controlling the laser processing device to perform the laser processing in the processing area, the laser processing including at least one of shifting, from a periphery of the processing area, a position of at least one of a start point at which the moving of the radiation point is begun and an end point at which the moving of the radiation point is ended, and reducing a power density of the radiation point at the periphery of the processing area as compared to a power density at a center of the processing area.

A non-transitory computer-readable medium storing instructions that, when executed by a processor, cause the processor to perform operations for substrate processing, the operations comprising:

• acquiring map data of waviness of a first main surface of a substrate before laser processing, the substrate having the first main surface and a second main surface opposite to the first main surface, the first main surface having the waviness;
• setting a processing area in at least a portion of the first main surface based on the map data of the waviness;
• controlling movement of a radiation point of a laser beam in the processing area;
• and
• performing the laser processing in the processing area of the first main surface of the substrate, including performing at least one of shifting, from a periphery of the processing area, a position of at least one of a start point at which the movement of the radiation point is begun and an end point at which the movement of the radiation point is ended, and reducing a power density of the radiation point at the periphery of the processing area as compared to a power density at a center of the processing area.