Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device is disclosed. The method for manufacturing a semiconductor device includes providing a laminate including a dicing/die-bonding integrated film having, in this order, a base layer, a pressure-sensitive adhesive layer, and an adhesive layer, and a plurality of semiconductor chips obtained by singulating a semiconductor wafer, the plurality of semiconductor chips being disposed on the adhesive layer of the dicing/die-bonding integrated film; irradiating the adhesive layer with a laser through gaps between the plurality of semiconductor chips to form a groove in the adhesive layer; and singulating the adhesive layer in which the groove has been formed by expanding the base layer to produce semiconductor chips with adhesive layer pieces attached. A thickness of the adhesive layer is from 30 to 50 μm, and a depth of the groove is 45% or less of the thickness of the adhesive layer.

Dependencies are inferred from the claim text.