H10P 34/40
Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of
Official title: with high-energy radiation
H10P34/40 (Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of) appears on 3,169 US grants and 3,367 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,169
- Published applications
- 3,367
- Assignees
- 784
- Inventors
- 5,554
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 9 | 0 |
| 1978 | 7 | 0 |
| 1979 | 11 | 0 |
| 1980 | 26 | 0 |
| 1981 | 26 | 0 |
| 1982 | 24 | 0 |
| 1983 | 37 | 0 |
| 1984 | 32 | 0 |
| 1985 | 36 | 0 |
| 1986 | 32 | 0 |
| 1987 | 29 | 0 |
| 1988 | 23 | 0 |
| 1989 | 20 | 0 |
| 1990 | 16 | 0 |
| 1991 | 16 | 0 |
| 1992 | 11 | 0 |
| 1993 | 13 | 0 |
| 1994 | 14 | 0 |
| 1995 | 9 | 0 |
| 1996 | 8 | 0 |
| 1997 | 2 | 0 |
| 1998 | 11 | 0 |
| 1999 | 19 | 0 |
| 2000 | 21 | 0 |
| 2001 | 33 | 15 |
| 2002 | 46 | 39 |
| 2003 | 47 | 67 |
| 2004 | 54 | 91 |
| 2005 | 56 | 104 |
| 2006 | 67 | 93 |
| 2007 | 56 | 108 |
| 2008 | 57 | 126 |
| 2009 | 86 | 126 |
| 2010 | 105 | 112 |
| 2011 | 112 | 145 |
| 2012 | 112 | 127 |
| 2013 | 111 | 145 |
| 2014 | 140 | 162 |
| 2015 | 135 | 227 |
| 2016 | 179 | 185 |
| 2017 | 195 | 198 |
| 2018 | 164 | 184 |
| 2019 | 156 | 169 |
| 2020 | 175 | 167 |
| 2021 | 138 | 174 |
| 2022 | 122 | 135 |
| 2023 | 92 | 137 |
| 2024 | 92 | 123 |
| 2025 | 99 | 113 |
| 2026 | 79 | 95 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing a SiGe channel field effect transistor6 Oct 2026US 12,757,658 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Processing method of bonded wafer22 Sep 2026US 12,745,579 B2Disco Corporation
- Semiconductor device and method for manufacturing the same15 Sep 2026US 12,740,354 B2Fuji Electric Co., Ltd.
- Substrate processing method and substrate processing apparatus8 Sep 2026US 12,733,418 B2Tokyo Electron Limited
- Semiconductor betavoltaic battery with integrated beta emitter1 Sep 2026US 12,725,717 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Method of epitaxial growth and method of manufacturing semiconductor device using the same1 Oct 2026US 2026/0305192 A1Rnr Lab Inc.
- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
- Method for manufacturing semiconductor device1 Oct 2026US 2026/0305213 A1Resonac Corporation
- Substrate processing method and substrate processing apparatus17 Sep 2026US 2026/0273651 A1Tokyo Electron Limited
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Method of fabricating oxide semiconductor device3,948US 7,468,304 B2Canon Kabushiki Kaisha · 2008
- Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator1,026US 7,601,984 B2Canon Kabushiki Kaisha · 2009