H10P 14/3254
Graded layers
Official title: {Graded layers}
H10P14/3254 (Graded layers) appears on 575 US grants and 672 published applications in this corpus.
Search patents in H10P- Granted patents
- 575
- Published applications
- 672
- Assignees
- 277
- Inventors
- 1,099
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 6 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 2 | 0 |
| 2000 | 4 | 0 |
| 2001 | 7 | 5 |
| 2002 | 5 | 25 |
| 2003 | 20 | 27 |
| 2004 | 24 | 34 |
| 2005 | 17 | 35 |
| 2006 | 21 | 32 |
| 2007 | 21 | 31 |
| 2008 | 19 | 27 |
| 2009 | 27 | 23 |
| 2010 | 24 | 21 |
| 2011 | 13 | 18 |
| 2012 | 13 | 25 |
| 2013 | 21 | 32 |
| 2014 | 28 | 49 |
| 2015 | 33 | 36 |
| 2016 | 41 | 26 |
| 2017 | 30 | 34 |
| 2018 | 24 | 20 |
| 2019 | 23 | 24 |
| 2020 | 18 | 24 |
| 2021 | 12 | 26 |
| 2022 | 15 | 24 |
| 2023 | 14 | 25 |
| 2024 | 20 | 28 |
| 2025 | 22 | 17 |
| 2026 | 5 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Epitaxies of a chemical compound semiconductor25 Aug 2026US 12,721,055 B2National Chiao Tung University
- Semiconductor laminate, semiconductor device, and method for manufacturing semiconductor device31 Mar 2026US 12,593,625 B2Shin-Etsu Chemical Co., Ltd.
- Indium gallium nitride light emitting diodes with reduced strain17 Mar 2026US 12,581,773 B2Google Inc.
- High efficiency tandem solar cells and a method for fabricating same10 Feb 2026US 12,550,457 B2
- Crystalline oxide semiconductor film, layered structure, and semiconductor device23 Jul 2026US 2026/0209989 A1Shin-Etsu Chemical Co., Ltd.
- Semiconductor structure for high electron mobility transistor30 Apr 2026US 2026/0122996 A1Hiper Semiconductor Inc.
- Nitride-based semiconductor device and method for manufacturing the same19 Feb 2026US 2026/0052719 A1Innoscience (Suzhou) Semiconductor Co., Ltd.
- A semiconductor structure12 Feb 2026US 2026/0047161 A1IQE plc
- Semiconductor structure27 Nov 2025US 2025/0366098 A1National Cheng Kung University
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Carrier channel with element concentration gradient distribution and fabrication method thereof520US 9,196,483 B1National Tsing Hua University · 2015
- Graded high germanium compound films for strained semiconductor devices429US 7,902,009 B2Intel Corporation · 2011
- Strained transistor integration for CMOS344US 7,662,689 B2Intel Corporation · 2010
- Monolithically integrated light emitting devices262US 7,535,089 B2Massachusetts Institute of Technology · 2009