H10H 20/017
Etching
Official title: {Etching}
H10H20/017 (Etching) appears on 18 US grants and 133 published applications in this corpus.
Search patents in H10H- Granted patents
- 18
- Published applications
- 133
- Assignees
- 65
- Inventors
- 342
- Latest grant
- 30 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2009 | 0 | 1 |
| 2010 | 0 | 1 |
| 2011 | 1 | 3 |
| 2012 | 1 | 1 |
| 2013 | 2 | 1 |
| 2014 | 1 | 4 |
| 2015 | 3 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 2 |
| 2019 | 1 | 0 |
| 2020 | 1 | 1 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 10 |
| 2024 | 1 | 1 |
| 2025 | 2 | 45 |
| 2026 | 4 | 62 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- Light emitting device and method of manufacturing the same19 May 2026US 12,635,294 B2Samsung Electronics Co., Ltd.
- Method of manufacturing a photonic device3 Feb 2026US 12,543,405 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Display device and method of manufacturing the display device20 Jan 2026US 12,532,592 B2Samsung Display Co., Ltd.
- Micro LED display device7 Oct 2025US 12,439,736 B2PlayNitride Display Co., Ltd.
- Micro led chip and preparation method thereof24 Sep 2026US 2026/0293370 A1Beijing Zitiao Network Technology Co., Ltd.
- Semiconductor light-emitting element, and display device24 Sep 2026US 2026/0293377 A1LG Electronics Inc.
- Method of manufacturing chip-on-wafer for micro led display17 Sep 2026US 2026/0282602 A1Wavelord Co., Ltd
- Chip structure and preparation method thereof17 Sep 2026US 2026/0282608 A1Suzhou Lekin Semiconductor Co., Ltd.
- Display device, method for manufacturing the same and electronic device10 Sep 2026US 2026/0271436 A1Samsung Display Co., Ltd.
Most cited
By later US patents
- Semiconductor light emitting diode8US 8,242,514 B2Samsung LED Co., Ltd. · 2012
- Light emitting diode (LED) die having stepped substrates and method of fabrication3US 8,686,461 B2SemiLEDS Optoelectronics Co., Ltd. · 2014
- Component having improved coupling-out properties1US 10,355,174 B2OSRAM Opto Semiconductors GmbH · 2019
- Gallium nitride based compound semiconductor light-emitting device having high emission efficiency and method of manufacturing the same1US 7,893,449 B2Showa Denko K. K. · 2011
- Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof1US 8,574,939 B2Advanced Optoelectronic Technology, Inc. · 2013