Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof
AssigneeAdvanced Optoelectronic Technology, Inc.
InventorsShih Cheng Huang, Po Min Tu, Peng Yi Wu, Wen Yu Lin, Chih Pang Ma, Tzu Chien Hong, Chia Hui Shen
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Abstract
A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
Claims13
A method for fabricating a semiconductor optoelectronic device, comprising the steps of:
- providing a substrate;
- forming a patterned silicon dioxide layer on the substrate;
- forming an upper buffer layer on the patterned silicon dioxide layer;
- forming a semiconductor layer on the upper buffer layer;
- removing the patterned silicon dioxide layer to form a groove pattern layer having a plurality of grooves;
- roughening the upper buffer layer from a side of the groove pattern layer;
- etching the semiconductor layer to form a cutting region;
- and
- forming a transparent electrically conductive layer on the semiconductor layer.
Dependencies are inferred from the claim text.