H10H 20/011
Of bodies
Official title: {of bodies, e.g. forming semiconductor layers}
H10H20/011 (Of bodies) appears on 8,511 US grants and 10,144 published applications in this corpus.
Search patents in H10H- Granted patents
- 8,511
- Published applications
- 10,144
- Assignees
- 1,497
- Inventors
- 10,362
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 6 | 0 |
| 1978 | 5 | 0 |
| 1979 | 0 | 0 |
| 1980 | 8 | 0 |
| 1981 | 8 | 0 |
| 1982 | 8 | 0 |
| 1983 | 8 | 0 |
| 1984 | 6 | 0 |
| 1985 | 9 | 0 |
| 1986 | 13 | 0 |
| 1987 | 27 | 0 |
| 1988 | 14 | 0 |
| 1989 | 24 | 0 |
| 1990 | 43 | 0 |
| 1991 | 64 | 0 |
| 1992 | 55 | 0 |
| 1993 | 63 | 0 |
| 1994 | 57 | 0 |
| 1995 | 43 | 0 |
| 1996 | 45 | 0 |
| 1997 | 41 | 0 |
| 1998 | 61 | 0 |
| 1999 | 68 | 0 |
| 2000 | 74 | 0 |
| 2001 | 80 | 55 |
| 2002 | 102 | 147 |
| 2003 | 116 | 134 |
| 2004 | 107 | 153 |
| 2005 | 111 | 213 |
| 2006 | 117 | 218 |
| 2007 | 104 | 257 |
| 2008 | 108 | 289 |
| 2009 | 124 | 288 |
| 2010 | 247 | 434 |
| 2011 | 286 | 533 |
| 2012 | 381 | 547 |
| 2013 | 450 | 523 |
| 2014 | 560 | 595 |
| 2015 | 540 | 564 |
| 2016 | 517 | 494 |
| 2017 | 444 | 465 |
| 2018 | 383 | 511 |
| 2019 | 530 | 540 |
| 2020 | 466 | 528 |
| 2021 | 387 | 489 |
| 2022 | 326 | 538 |
| 2023 | 299 | 522 |
| 2024 | 329 | 455 |
| 2025 | 380 | 401 |
| 2026 | 258 | 251 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10H 20/013Having light-emitting regions comprising only group iii-v materials5,428
- H10H 20/018Bonding of wafers3,816
- H10H 20/012Having light-emitting regions comprising only group ii-iv materials270
- H10H 20/014Having light-emitting regions comprising only group iv materials199
- H10H 20/019Removal of at least a part of a substrate on which semiconductor65
- H10H 20/017Etching18
- H10H 20/016Thermal treatments7
Recent patents
- Substrate processing for GaN growth6 Oct 2026US 12,757,524 B2APPLIED Materials.Inc.
- High electron mobility transistor epitaxial structure that includes carbon doped nitride layers6 Oct 2026US 12,757,526 B2GlobalWafers Co., Ltd.
- LED with segmented semiconductor structure6 Oct 2026US 12,757,540 B2Lumileds LLC
- LED device and method of manufacture6 Oct 2026US 12,757,553 B2Poro Technologies Ltd
- Light emitting element and production method therefor29 Sep 2026US 12,751,128 B2Toyoda Gosei Co., Ltd.
- Display chip and display apparatus and manufacturing methods thereof8 Oct 2026US 2026/0314137 A1Beijing Zitiao Network Technology Co., Ltd.
- Display device and manufacturing method thereof8 Oct 2026US 2026/0314141 A1Samsung Display Co., Ltd.
- Display device for enhanced individual productivity and collaborative interactions1 Oct 2026US 2026/0301647 A1
- Light emitting diode and manufacturing method thereof1 Oct 2026US 2026/0305021 A1Taiwan-Asia Semiconductor Corporation
- Light-emitting diode structure and method of manufacturing the same1 Oct 2026US 2026/0305472 A1United Microelectronics Corp.
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Separation of thin films from transparent substrates by selective optical processing783US 6,071,795 AThe Regents of the University of California · 2000
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Vertical geometry light emitting diode with group III nitride active layer and extended lifetime664US 5,523,589 ACree Research, Inc. · 1996