LED with segmented semiconductor structure
AssigneeLumileds LLC
InventorsFlorent Monestier, Peter Josef Schmidt
Life of this patent
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Abstract
A compact LED package has a segmented semiconductor structure that may emit light and at least two wavelength converting structures absorbing the emitted light to emit their own light. One of the wavelength converting structures may emit infrared (IR) or near-infrared (NIR) light, e.g., for IR sensing functions, while the other may emit visible light. The wavelength converting structures may be ceramic platelets coupled to each other. The segments of the semiconductor structure may be individually addressable, and the segmented semiconductor structure may allow for a reduction of package size compared to conventional LED packages.
Claims20
A light emitting device, comprising:
- a semiconductor structure comprising an n-doped layer, a p-doped layer, and active layer, the semiconductor structure comprising:
- a first segment configured to emit light of a first wavelength;
- a second segment configured to emit light of the first wavelength;
- and
- a trench adjacent to the first and second segment spacing apart the first and second segment from each other, the trench extending through the n-doped layer, the p-doped layer, and the active layer;
- a first wavelength converter arranged in the light path of the first segment and configured to absorb light of the first wavelength emitted by the first segment and emit light of a second wavelength different from the first wavelength;
- a second wavelength converter arranged in the light path of the second segment and configured to absorb light of the first wavelength emitted by the second segment and emit light of a third wavelength different from the first and second wavelength;
- and
- a substrate disposed between the first wavelength converter and the semiconductor structure.
A method of producing a light emitting device, comprising:
- providing a semiconductor structure comprising an n-doped layer, a p-doped layer, and active layer, the semiconductor structure disposed on a substrate;
- segmenting the semiconductor structure to produce a first segment and a second segment spaced apart from the first segment by a trench, the first and second segment configured to emit light of a first wavelength, the second segment individually addressable with respect to the first segment, the trench extending through the n-doped layer, the p-doped layer, and the active layer;
- coupling the first and second segments to a first wavelength converter and a second wavelength converter, the first wavelength converter configured to absorb light of the first wavelength and emit light of an infrared and/or near infrared wavelength, the second wavelength converter configured to absorb light of the first wavelength and emit light of a visible wavelength, the substrate disposed between the first wavelength converter and the semiconductor structure;
- contacting the first segment with a first anode and the second segment with a second anode.
Dependencies are inferred from the claim text.