Light emitting element and production method therefor

A method for producing a light emitting element comprising a group III nitride semiconductor, comprising:

• an n layer forming step of forming an n layer comprising an n-type group III nitride semiconductor over a substrate;
• a first active layer forming step of forming a first active layer having a predetermined emission wavelength over the n layer;
• a middle layer forming step of forming a middle layer comprising a group III nitride semiconductor containing In over the first active layer;
• a second active layer forming step of forming a second active layer having an emission wavelength different from the emission wavelength of the first active layer over the middle layer;
• a groove forming step of forming a groove having a depth reaching the middle layer from a side of the second active layer;
• and
• a p layer forming step of forming a first p layer comprising a p-type group III nitride semiconductor and a second p layer comprising a p-type group III nitride semiconductor over the second active layer and over the middle layer exposed on a bottom surface of the groove, respectively, wherein
• a non-n layer comprising a group III nitride semiconductor and containing O or Si and a p-type impurity is formed after the groove forming step and before the p layer forming step.