Back to results
US 12,757,524 B2Granted
Substrate processing for GaN growth
AssigneeApplied Materials, Inc.
InventorsMichel Khoury, Ria Someshwar
Life of this patent
Estimating the term…
Abstract
Exemplary semiconductor structures may include a silicon-containing substrate. The structures may include a layer of a metal nitride overlying the silicon-containing substrate. The layer of the metal nitride may include a plurality of features. The structures may include a gallium nitride structure overlying the layer of the metal nitride.
Claims19
A semiconductor structure comprising:
- a silicon substrate;
- a layer of a metal nitride overlying the silicon substrate, wherein the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride, wherein the layer of the metal nitride comprises a plurality of features characterized by a depth of less than or about 100 nm, wherein a formation of the plurality of features occurs during formation of the layer of the metal nitride, and wherein the layer of the metal nitride is annealed at a temperature of greater than or about 1000° C. for a period of time greater than or about 60 minutes;
- and
- a gallium nitride structure overlying the layer of the metal nitride, wherein the gallium nitride structure is characterized by a dislocation density of less than or about 7 E9/cm2.
1 more element
A semiconductor structure comprising:
- a silicon substrate;
- a seed layer of a metal nitride overlying the silicon substrate, wherein the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride, wherein the seed layer of the metal nitride defines a plurality of recesses characterized by a width of between about 1 nm and about 100 nm, and wherein the seed layer of the metal nitride is annealed at a temperature of greater than or about 1000° C. for a period of time greater than or about 60 minutes;
- and
- a gallium nitride structure overlying the seed layer of the metal nitride, wherein the gallium nitride structure extends into the plurality of recesses defined in the seed layer of the metal nitride, wherein the gallium nitride structure is characterized by a dislocation density of less than or about 7 E9/cm2.
1 more element
A semiconductor structure comprising:
- a silicon substrate;
- a layer of a metal nitride overlying the silicon substrate, wherein the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride, wherein the layer of the metal nitride is aluminum nitride, and wherein the layer of the metal nitride comprises a plurality of features characterized by a depth of less than or about 100 nm, and wherein the layer of the metal nitride is annealed at a temperature of greater than or about 1000° C. for a period of time greater than or about 60 minutes;
- and
- a gallium nitride structure overlying the layer of the metal nitride, wherein the gallium nitride structure extends into the plurality of features defined in the layer of the metal nitride, wherein the gallium nitride structure is characterized by a dislocation density of less than or about 7 E9/cm2.
1 more element
Dependencies are inferred from the claim text.