Display chip and display apparatus and manufacturing methods thereof

A display apparatus, comprising a chip structure and a second substrate, wherein the chip structure is formed by a display chip and the chip structure is bonded to the second substrate through a first metal bonding layer;

• and the display chip comprises:
• an epitaxial layer, wherein the epitaxial layer comprises a first semiconductor layer, a quantum well light-emitting layer, and a second semiconductor layer that are sequentially stacked, and one of the first semiconductor layer and the second semiconductor layer is an n-type semiconductor layer, and the other one of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer;
• a first reflective layer, located on a side of the second semiconductor layer away from the first semiconductor layer;
• the first metal bonding layer, located on a side of the first reflective layer away from an epitaxial structure;
• and
• a heat dissipation layer, wherein the heat dissipation layer comprises a first heat dissipation layer and/or a second heat dissipation layer, the first heat dissipation layer is located between the epitaxial structure and the first reflective layer, the second heat dissipation layer is located on a side of the first reflective layer away from the epitaxial structure, the second heat dissipation layer is provided with a first opening that exposes the first reflective layer, and the first metal bonding layer is disposed on a side of the second heat dissipation layer away from the first reflective layer and fills the first opening.

A manufacturing method of a display chip, wherein the display chip comprises:

• an epitaxial layer, wherein the epitaxial layer comprises a first semiconductor layer, a quantum well light-emitting layer, and a second semiconductor layer that are sequentially stacked, and one of the first semiconductor layer and the second semiconductor layer is an n-type semiconductor layer, and the other one of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer;
• a first reflective layer, located on a side of the second semiconductor layer away from the first semiconductor layer;
• a first metal bonding layer, located on a side of the first reflective layer away from an epitaxial structure;
• and
• a heat dissipation layer, wherein the heat dissipation layer comprises a first heat dissipation layer and/or a second heat dissipation layer, the first heat dissipation layer is located between the epitaxial structure and the first reflective layer, the second heat dissipation layer is located on a side of the first reflective layer away from the epitaxial structure, the second heat dissipation layer is provided with a first opening that exposes the first reflective layer, and the first metal bonding layer is disposed on a side of the second heat dissipation layer away from the first reflective layer and fills the first opening, and the manufacturing method comprises:
• providing an epitaxial wafer for forming the epitaxial layer;
• forming the first reflective layer on a side of the second semiconductor layer of the epitaxial wafer away from the first semiconductor layer;
• and
• forming the first metal bonding layer on the first reflective layer,
• wherein
• the first heat dissipation layer is formed on the side of the second semiconductor layer of the epitaxial wafer away from the first semiconductor layer first, and then the first reflective layer is formed on a side of the first heat dissipation layer away from the second semiconductor layer;
• and/or
• a dielectric layer is formed on a side of the first reflective layer away from the epitaxial wafer;
• the dielectric layer is patterned to form a second opening that exposes the first reflective layer;
• then the second heat dissipation layer that fills the second opening is formed;
• the dielectric layer is etched and removed to form a first opening that exposes the first reflective layer;
• and
• the first metal bonding layer is formed on a side of the second heat dissipation layer away from the first reflective layer, and the first metal bonding layer fills the first opening.