H10H 20/013
Having light-emitting regions comprising only group iii-v materials
Official title: {having light-emitting regions comprising only Group III-V materials}
H10H20/013 (Having light-emitting regions comprising only group iii-v materials) appears on 5,428 US grants and 6,253 published applications in this corpus.
Search patents in H10H- Granted patents
- 5,428
- Published applications
- 6,253
- Assignees
- 1,095
- Inventors
- 7,224
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 5 | 0 |
| 1978 | 4 | 0 |
| 1979 | 0 | 0 |
| 1980 | 7 | 0 |
| 1981 | 7 | 0 |
| 1982 | 7 | 0 |
| 1983 | 7 | 0 |
| 1984 | 6 | 0 |
| 1985 | 8 | 0 |
| 1986 | 12 | 0 |
| 1987 | 22 | 0 |
| 1988 | 11 | 0 |
| 1989 | 20 | 0 |
| 1990 | 36 | 0 |
| 1991 | 48 | 0 |
| 1992 | 42 | 0 |
| 1993 | 52 | 0 |
| 1994 | 44 | 0 |
| 1995 | 27 | 0 |
| 1996 | 30 | 0 |
| 1997 | 31 | 0 |
| 1998 | 52 | 0 |
| 1999 | 57 | 0 |
| 2000 | 65 | 0 |
| 2001 | 64 | 44 |
| 2002 | 79 | 114 |
| 2003 | 86 | 96 |
| 2004 | 74 | 80 |
| 2005 | 74 | 110 |
| 2006 | 72 | 117 |
| 2007 | 54 | 148 |
| 2008 | 52 | 151 |
| 2009 | 80 | 162 |
| 2010 | 132 | 208 |
| 2011 | 147 | 267 |
| 2012 | 187 | 334 |
| 2013 | 226 | 300 |
| 2014 | 319 | 374 |
| 2015 | 332 | 382 |
| 2016 | 345 | 352 |
| 2017 | 305 | 322 |
| 2018 | 258 | 349 |
| 2019 | 371 | 382 |
| 2020 | 319 | 340 |
| 2021 | 260 | 291 |
| 2022 | 188 | 334 |
| 2023 | 188 | 327 |
| 2024 | 201 | 300 |
| 2025 | 235 | 220 |
| 2026 | 174 | 149 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Substrate processing for GaN growth6 Oct 2026US 12,757,524 B2APPLIED Materials.Inc.
- High electron mobility transistor epitaxial structure that includes carbon doped nitride layers6 Oct 2026US 12,757,526 B2GlobalWafers Co., Ltd.
- LED with segmented semiconductor structure6 Oct 2026US 12,757,540 B2Lumileds LLC
- LED device and method of manufacture6 Oct 2026US 12,757,553 B2Poro Technologies Ltd
- Light emitting element and production method therefor29 Sep 2026US 12,751,128 B2Toyoda Gosei Co., Ltd.
- Display chip and display apparatus and manufacturing methods thereof8 Oct 2026US 2026/0314137 A1Beijing Zitiao Network Technology Co., Ltd.
- Display device for enhanced individual productivity and collaborative interactions1 Oct 2026US 2026/0301647 A1
- Light emitting diode and manufacturing method thereof1 Oct 2026US 2026/0305021 A1Taiwan-Asia Semiconductor Corporation
- Micro led chip and preparation method thereof24 Sep 2026US 2026/0293370 A1Beijing Zitiao Network Technology Co., Ltd.
- Optoelectronic device and method for processing the same24 Sep 2026US 2026/0293373 A1
Most cited
By later US patents
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Separation of thin films from transparent substrates by selective optical processing783US 6,071,795 AThe Regents of the University of California · 2000
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Vertical geometry light emitting diode with group III nitride active layer and extended lifetime664US 5,523,589 ACree Research, Inc. · 1996
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000