H10H 20/0137
The light-emitting regions comprising nitride materials
Official title: {the light-emitting regions comprising nitride materials}
H10H20/0137 (The light-emitting regions comprising nitride materials) appears on 1,893 US grants and 2,358 published applications in this corpus.
Search patents in H10H- Granted patents
- 1,893
- Published applications
- 2,358
- Assignees
- 499
- Inventors
- 2,963
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 6 | 0 |
| 1998 | 11 | 0 |
| 1999 | 8 | 0 |
| 2000 | 12 | 0 |
| 2001 | 10 | 13 |
| 2002 | 22 | 28 |
| 2003 | 14 | 14 |
| 2004 | 20 | 14 |
| 2005 | 16 | 23 |
| 2006 | 13 | 18 |
| 2007 | 9 | 31 |
| 2008 | 15 | 44 |
| 2009 | 18 | 30 |
| 2010 | 32 | 44 |
| 2011 | 31 | 61 |
| 2012 | 39 | 78 |
| 2013 | 51 | 95 |
| 2014 | 91 | 158 |
| 2015 | 132 | 189 |
| 2016 | 159 | 167 |
| 2017 | 151 | 158 |
| 2018 | 121 | 151 |
| 2019 | 173 | 198 |
| 2020 | 162 | 157 |
| 2021 | 127 | 153 |
| 2022 | 86 | 167 |
| 2023 | 97 | 134 |
| 2024 | 92 | 104 |
| 2025 | 101 | 88 |
| 2026 | 68 | 41 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High electron mobility transistor epitaxial structure that includes carbon doped nitride layers6 Oct 2026US 12,757,526 B2GlobalWafers Co., Ltd.
- LED device and method of manufacture6 Oct 2026US 12,757,553 B2Poro Technologies Ltd
- Epitaxial structure of light-emitting device and manufacturing method thereof22 Sep 2026US 12,745,488 B2Enkris Semiconductor, Inc.
- LED device having porous region of III-nitride material15 Sep 2026US 12,740,216 B2Poro Technologies Ltd
- Multi-wavelength LED structures and manufacturing methods thereof1 Sep 2026US 12,727,285 B2Enkris Semiconductor, Inc.
- Display device for enhanced individual productivity and collaborative interactions1 Oct 2026US 2026/0301647 A1
- Micro led chip and preparation method thereof24 Sep 2026US 2026/0293370 A1Beijing Zitiao Network Technology Co., Ltd.
- Nitride semiconductor element and method of manufacturing nitride semiconductor element24 Sep 2026US 2026/0293378 A1Nichia Corporation
- Thin quantum barrier with high aluminum content for ultraviolet light emitters17 Sep 2026US 2026/0282604 A1The Regents of the University of California
- Display device and method of manufacturing display device17 Sep 2026US 2026/0282611 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Semiconductor light emitting device496US 8,008,683 B2Samsung LED Co., Ltd. · 2011
- Nitride semiconductor light emitting device and fabrication method thereof496US 8,129,711 B2Samsung LED Co., Ltd. · 2012
- GaN-based devices using (Ga, AL, In)N base layers311US 6,156,581 AAdvanced Technology Materials, Inc. · 2000
- Indium gallium nitride smoothing structures for III-nitride devices274US 6,635,904 B2Lumileds Lighting U.S., LLC · 2003
- Gallium nitride materials and methods249US 6,617,060 B2Nitronex Corporation · 2003