Nitride semiconductor element and method of manufacturing nitride semiconductor element

A nitride semiconductor element comprising:

• a first light emission part comprising a first n-side semiconductor layer, a first p-side semiconductor layer, and a first active layer between the first n-side semiconductor layer and the first p-side semiconductor layer;
• a first layer that contains an n-type impurity of a first concentration, is located on the first light emission part, and is in contact with the first p-side semiconductor layer;
• a second layer that contains an n-type impurity of a second concentration, and is located on the first layer;
• and
• a second light emission part comprising a second n-side semiconductor layer located on the second layer, a second p-side semiconductor layer, and a second active layer between the second n-side semiconductor layer and the second p-side semiconductor layer;
• wherein:
• the second n-side semiconductor layer contains an n-type impurity of a third concentration,
• the first concentration and the second concentration are higher than the third concentration,
• the first concentration is higher than the second concentration.