Epitaxial structure of light-emitting device and manufacturing method thereof
AssigneeEnkris Semiconductor, Inc.
InventorsWeihua Liu, Kai Cheng
Life of this patent
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Abstract
An epitaxial structure of a light-emitting device and a manufacturing method thereof are provided. The epitaxial structure of the light-emitting device includes a first semiconductor layer, an active region and a second semiconductor layer sequentially stacked; where the active region includes at least one group of a barrier layer and a quantum well layer which are stacked, a surface of the quantum well layer away from the first semiconductor layer has a first roughness, a surface of the barrier layer away from the first semiconductor layer has a second roughness, and the first roughness is greater than the second roughness.
Claims17
An epitaxial structure of a light-emitting device, comprising a first semiconductor layer, an active region and a second semiconductor layer sequentially stacked;
- wherein the active region comprises at least two groups of barrier layers and quantum well layers which are stacked, a surface of each of the quantum well layers away from the first semiconductor layer has a first roughness, a surface of each of the barrier layers away from the first semiconductor layer has a second roughness, and the first roughness is greater than the second roughness;
- wherein the surface of each of the quantum well layers away from the first semiconductor layer is provided with at least one first recess, and the surface of each of the barrier layers away from the first semiconductor layer is provided with at least one second recess;
- wherein surfaces of all of the quantum well layers have the same first roughness;
- wherein surfaces of all of the barrier layers have the same second roughness.
A method of manufacturing an epitaxial structure of a light-emitting device, comprising:
- forming a first semiconductor layer;
- forming an active region comprising at least two groups of barrier layers and quantum well layers which are stacked, wherein forming the quantum well layer comprises sequentially occurring a first time period and a second time period, in the second time period, an etch source is introduced, such that a surface of each of the quantum well layers away from the first semiconductor layer has a first roughness, then, the barrier layer is formed, a surface of each of the barrier layers away from the first semiconductor layer has a second roughness, and the first roughness is greater than the second roughness;
- and
- forming a second semiconductor layer;
- wherein the surface of each of the quantum well layers away from the first semiconductor layer is provided with at least one first recess, and the surface of each of the barrier layers away from the first semiconductor layer is provided with at least one second recess;
- wherein surfaces of all of the quantum well layers have the same first roughness;
- wherein surfaces of all of the barrier layers have the same second roughness.
Dependencies are inferred from the claim text.