Back to results
US 8,008,683 B2Granted
Semiconductor light emitting device
AssigneeSamsung LED Co., Ltd.
InventorsPun Jae Choi, Yu Seung Kim, Jin Bock Lee
Life of this patent
Estimating the term…
Abstract
The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.
Claims11
A semiconductor light emitting device comprising:
- a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, and
- an electrode pad unit disposed on an upper surface of the second electrode layer,
- wherein the second electrode layer includes at least one region where a portion of an interface in contact with the second semiconductor layer is exposed,
- the first electrode layer penetrates the second electrode layer, the second semiconductor layer, and the active layer and is electrically connected to the first semiconductor layer by being extended to predetermined regions of the first semiconductor layer through a plurality of contact holes which penetrate the predetermined regions of the first semiconductor layer,
- the insulating layer insulates the conductive substrate and the first electrode layer from the second electrode layer, the second semiconductor layer and the active layer by being formed between the first electrode layer and the second electrode layer and on side surfaces of the contact holes.
2 more elements
Dependencies are inferred from the claim text.