Multi-wavelength LED structures and manufacturing methods thereof

A multi-wavelength LED structure, comprising:

• a first semiconductor layer;
• a stress release layer located on the first semiconductor layer, wherein the stress release layer is provided with a V-shaped pit, wherein the V-shaped pit penetrates part of a thickness of the stress release layer;
• a first quantum well layer and a second quantum well layer stacked from bottom to top on a side wall of the V-shaped pit and a top wall of the stress release layer;
• wherein the second quantum well layer located on the top wall of the stress release layer is a first light-emitting region, the first quantum well layer located on the top wall of the stress release layer is a second light-emitting region, and the first quantum well layer or the second quantum well layer located on the side wall of the V-shaped pit is a third light-emitting region;
• and
• a second semiconductor layer located on the second quantum well layer, wherein a conductive type of the second semiconductor layer is opposite to a conductive type of the first semiconductor layer;
• if electron-hole pairs of the second semiconductor layer and the first semiconductor layer recombine in the first light-emitting region, light corresponding to a first light-emitting wavelength emits;
• if electron-hole pairs of the second semiconductor layer and the first semiconductor layer recombine in the second light-emitting region, light corresponding to a second light-emitting wavelength emits;
• if electronic-hole pairs of the second semiconductor layer and the first semiconductor layer recombine in the third light-emitting region through the side wall of the V-shaped pit, light corresponding to a third light-emitting wavelength emits;
• and the first light-emitting wavelength, the second light-emitting wavelength and the third light-emitting wavelength correspond to different colors of lights;
• wherein
• a conductivity type of the first semiconductor layer is N-type, and a conductivity type of the second semiconductor layer is P-type, and
• the second quantum well layer comprises a second well layer, second barrier layers arranged on both sides of the second well layer, and a second anti-annihilation layer arranged between the second barrier layer adjacent to the second semiconductor layer and the second well layer, and a conduction band energy level of the second anti-annihilation layer is higher than a conduction band energy level of the second barrier layer, and/or
• the first quantum well layer comprises a first well layer, first barrier layers arranged on both sides of the first well layer, and a first anti-annihilation layer arranged between the first barrier layer adjacent to the second quantum well layer and the first well layer, and a conduction band energy level of the first anti-annihilation layer is higher than a conduction band energy level of the first barrier layer;
• or
• a conductivity type of the first semiconductor layer is P-type, and a conductivity type of the second semiconductor layer is N-type, and
• the first quantum well layer comprises a first well layer, first barrier layers arranged on both sides of the first well layer, and a first anti-annihilation layer arranged between the first barrier layer adjacent to the stress release layer and the first well layer, and a conduction band energy level of the first anti-annihilation layer is higher than a conduction band energy level of the first barrier layer, and/or
• the second quantum well layer comprises a second well layer, second barrier layers arranged on both sides of the second well layer, and a second anti-annihilation layer arranged between the second barrier layer adjacent to the first quantum well layer and the second well layer, and a conduction band energy level of the second anti-annihilation layer is higher than a conduction band energy level of the second barrier layer;
• wherein
• a first interlayer is arranged between the first anti-annihilation layer and the first well layer, and a proportion of an amount of Al element in the first interlayer is less than a proportion of an amount of Al element in the first anti-annihilation layer;
• and
• a second interlayer is arranged between the second anti-annihilation layer and the second well layer, and a proportion of an amount of Al element in the second interlayer is less than a proportion of an amount of Al element in the second anti-annihilation layer.