LED device having porous region of III-nitride material
AssigneePoro Technologies Ltd
InventorsYingjun Liu, Tongtong Zhu, Muhammad Ali
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Abstract
A method of manufacturing an LED device comprises the steps of: forming a second LED structure over a first LED structure, in which at least one of the first or second LED structures is positioned over a porous region of III-nitride material. An LED device comprises a second LED structure positioned over a first LED structure, in which at least one of the first or second LED structures is positioned over a porous region of III-nitride material. An array of LEDs and a three-colour LED device are also provided.
Claims7
A light-emitting diode (LED) device, comprising:
- a first LED structure;
- a porous region of III-nitride material over the first LED structure, and
- a second LED structure positioned over the porous region of III-nitride material,
- additionally comprising a non-porous region of III-nitride material positioned over a p-doped portion of the first LED structure, the non-porous region being positioned in a same plane as the porous region of III-nitride material.
A three colour red-green-blue (RGB) light-emitting diode (LED) device, comprising:
- a first LED structure, configured to emit light at a first emission wavelength,
- a second LED structure, configured to emit light at a second emission wavelength different from the first emission wavelength, positioned over the first LED structure, and
- a third LED structure, configured to emit light at a third emission wavelength different from the first and second emission wavelengths, positioned over the first LED structure,
- in which at least one of the first and second LED structures is positioned over a first porous region of III-nitride material, and in which the third LED structure is not positioned over the first porous region of III-nitride material,
- in which the third LED structures are configured to emit red, green and blue light under an applied electrical bias, in which the third LED structures are configured so that:
- the first LED structure emits light at a peak wavelength between 400 and 500 nm;
- the second LED structure emits light at a peak wavelength between 600 and 650 nm;
- and
- the third LED structure emits light at a peak wavelength between 515 and 550 nm.
Dependencies are inferred from the claim text.