Micro led chip and preparation method thereof
AssigneeBeijing Zitiao Network Technology Co., Ltd.
InventorsZhen HUANG, Chenggong WANG, Duo LI, Xiaokai LI
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AssigneeBeijing Zitiao Network Technology Co., Ltd.
InventorsZhen HUANG, Chenggong WANG, Duo LI, Xiaokai LI
Estimating the term…
A method for preparing the Micro-LED chip includes: forming a blue pixel column, a green pixel column, and a red pixel column, where forming the pixel columns includes: epitaxially growing a plurality of first n-type doped GaN layers arranged at intervals on the side of the buffer layer; growing a first barrier layer on a surface of the first n-type doped GaN layers; growing a quantum well structure layer on a surface of the first barrier layer; sequentially growing a blue quantum well light-emitting layer, a green quantum well light-emitting layer, and a red quantum well light-emitting layer on a surface of the quantum well structure layer; etching and removing the red quantum well light-emitting layer and the green quantum well light-emitting layer used for forming the blue pixel column; and etching and removing the red quantum well light-emitting layer used for forming the green pixel column.
A method for preparing a Micro-LED chip, comprising:
The method according to claim wherein the substrate is a n-type doped silicon carbide substrate, the buffer layer is a n-type doped aluminum gallium nitride layer, and the pixel columns are directly formed on a surface of the buffer layer away from the substrate;
A Micro LED chip, which is prepared by the a method comprising:
Dependencies are inferred from the claim text.