Nitride semiconductor light emitting device and fabrication method thereof

A nitride semiconductor light emitting device comprising:

• a substrate;
• an n-type semiconductor layer formed on the substrate;
• an active layer formed on the n-type semiconductor layer;
• a p-type semiconductor layer formed on the active layer;
• a transparent electrode formed on the p-type semiconductor layer;
• an n-type electrode formed on an exposed portion of the n-type semiconductor layer;
• and
• p-type bonding electrode formed on the transparent electrode,
• wherein at least one of the n-type semiconductor layer and the p-type semiconductor layer further includes a super lattice layer or a multi-stacked layer;
• and
• a V-shaped distortion structure is formed at least one portion of the active layer and the p-type semiconductor layer with reference to the n-type semiconductor layer,
• wherein the p-type nitride semiconductor layer comprises a hole injection layer formed on the active layer and a p-type contact layer formed on the hole injection layer,
• the V-shaped distortion structure is filled in an area between the p-type contact layer and the active layer, so that the lower surface of the p-type contact layer is flat, and
• the upper and lower surfaces of the active layer in the V-shaped distortion are bent towards the n-type nitride semiconductor layer, respectively.