Optoelectronic device and method for processing the same

An optoelectronic device comprising:

• a semiconductor layer stack comprising a first doped layer comprising a first doping type, a second doped layer comprising a second doping type and an active layer between the first doped layer and the second doped layer,
• wherein a material of the semiconductor layer stack comprises AlGaAs and/or GaAs,
• wherein the semiconductor layer stack comprises mesa sidewalls extending from the first doped layer to the second doped layer;
• and
• a functional structure arranged on a surface of the sidewalls at least at the active layer, the functional structure configured to cause a reduction of a radiative recombination lifetime, wherein the functional structure comprises a dielectric oxide containing layer disposed on the sidewalls of the semiconductor layer stack and optionally extending partially onto a top surface of the semiconductor layer stack,
• a plurality of interface states on the sidewalls at least at the active layer based on a deposition of the dielectric layer,
• wherein the functional structure comprises a regrown and oxidized AlxGa1−xAs layer disposed on the sidewalls of the semiconductor layer stack and optionally extending partially onto the top surface of the semiconductor layer stack, and
• wherein, optionally, x>0.5.

A method for processing an optoelectronic device, the method comprising:

• providing a semiconductor layer stack comprising a first doped layer comprising a first doping type, a second doped layer comprising a second doping type and an active layer between the first and second doped layer, wherein a material of the semiconductor layer stack comprises AlGaAs and/or GaAs;
• mesa etching the semiconductor layer stack to form inclined sidewalls extending from the first doped layer to the second doped layer;
• cleaning and optionally annealing the mesa-etched sidewalls;
• generating a functional structure on a surface of the cleaned mesa-etched sidewalls at least at the active layer causing a reduction of a radiative recombination lifetime,
• wherein generating the functional structure comprises:
• regrowing an AlxGa1−xAs layer on the mesa-etched sidewalls of the semiconductor layer stack and optionally extending partially onto a top surface of the semiconductor layer stack, wherein x>0.5, and
• oxidizing the regrown AlxGa1−xAs layer, and
• wherein during the deposition of the oxidized regrown AlxGa1−xAs layer a plurality of interface states is formed on the mesa-etched sidewalls at least at the active layer.