Component having improved coupling-out properties

A component comprising a carrier, a semiconductor body arranged on the carrier and a mirror layer, wherein

• the semiconductor body has a first main surface remote from the carrier and a second main surface facing the carrier, and the semiconductor body has a first semiconductor layer on the side of the first main surface and a second semiconductor layer on the side of the second main surface,
• the semiconductor body has an active layer arranged between the first and the second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through the first main surface,
• on the first main surface the component has an electrical contact layer configured to electrically contact the first semiconductor layer and in a plan view of the carrier covers the first main surface in places,
• in a direct vicinity of the electrical contact layer the component comprises a shielding structure configured to prevent the electromagnetic radiation generated by the active layer from impinging onto the contact layer,
• the mirror layer is arranged in a vertical direction between the semiconductor body and the carrier, and in a plan view of the carrier from the first main surface, the shielding structure is arranged in a lateral direction between the electrical contact layer and the mirror layer,
• in a plan view of the carrier, the mirror layer and the electrical contact layer are free of an overlap, and
• the entire shielding structure is arranged laterally between the electrical contact layer and the mirror layer.

A component comprising a carrier, a semiconductor body arranged on the carrier and a mirror layer, wherein

• the semiconductor body has a first main surface remote from the carrier and a second main surface facing the carrier, and the semiconductor body has a first semiconductor layer on the side of the first main surface and a second semiconductor layer on the side of the second main surface,
• the semiconductor body has an active layer arranged between the first and the second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through the first main surface,
• on the first main surface the component has an electrical contact layer configured to electrically contact the first semiconductor layer and in a plan view of the carrier covers the first main surface in places,
• in a direct vicinity of the electrical contact layer the component comprises a shielding structure configured to prevent the electromagnetic radiation generated by the active layer from impinging onto the contact layer,
• the mirror layer is arranged in a vertical direction between the semiconductor body and the carrier, and in a plan view of the carrier from the first main surface, the shielding structure is arranged in a lateral direction between the electrical contact layer and the mirror layer,
• in a plan view of the carrier, the mirror layer and the electrical contact layer are free of an overlap, and
• the shielding structure has a plurality of openings having elongated cross sections, and the electrical contact layer is surrounded in places by a plurality of rows of periodically arranged openings such that lateral interspaces between adjacent openings of one row are covered by openings of one neighboring row.