Method of manufacturing a photonic device
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsMargaux Audibert, Amélie Dussaigne, Guillaume Veux
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Abstract
A method of manufacturing a photonic device including the following steps: providing a structure including a base substrate covered by (Al,In,Ga)N/(Al,In,Ga)N mesas, a first mesa being fully porosified and having flanks covered by a protective layer, a second mesa being non-porosified, and a third mesa including porosified flanks and a non-porosified central portion, epitaxially growing an active structure including InGaN-based quantum wells simultaneously on the first mesa, the second mesa, and the third mesa, to respectively form a first active structure emitting at a first wavelength, a second active structure emitting at a second wavelength, and a third active structure emitting at a third wavelength.
Claims6
Method of manufacturing a photonic device comprising the following steps:
- providing a structure comprising a base substrate covered by (Al,In,Ga)N/(Al,In,Ga)N mesas,
- a first mesa being fully porosified and having flanks covered by a protective layer, a second mesa being non-porosified, and a third mesa comprising porosified flanks and a non-porosified central portion,
- epitaxially growing an active structure comprising InGaN-based quantum wells, simultaneously on the first mesa, the second mesa, and the third mesa, whereby the active structure on the first mesa emits at a first wavelength, the active structure on the second mesa emits at a second wavelength, and the active structure on the third mesa emits at a third wavelength,
- the first wavelength being greater than the second and than the third wavelength,
- the third wavelength being shorter than the second wavelength.
Dependencies are inferred from the claim text.