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US 8,686,461 B2Granted
Light emitting diode (LED) die having stepped substrates and method of fabrication
AssigneeSemiLEDS Optoelectronics Co., Ltd.
InventorsJiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
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Abstract
A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
Claims12
A light emitting diode die comprising:
- an epitaxial stack comprising a first-type semiconductor layer, a multiple quantum well (MQW) layer on the first-type semiconductor layer configured to emit light, and a second-type semiconductor layer on the multiple quantum well (MQW) layer;
- a first substrate comprising a deposited semiconductor material on the first-type semiconductor layer having a first surface, an opposing second surface and a first area greater than an area of the first-type semiconductor layer;
- a second substrate on the first substrate configured for attachment to a LED substrate having a second area less than the first area;
- a seed layer on the first surface of the first substrate configured to assist deposition of the first substrate on the first-type semiconductor layer;
- and
- a reflector layer on the seed layer;
- the first substrate and the second substrate forming a stepped protective structure configured to protect the epitaxial stack during attachment of the light emitting diode die to the LED substrate.
4 more elements
A light emitting diode die comprising:
- an epitaxial stack comprising a first-type semiconductor layer, a multiple quantum well (MQW) layer on the first-type semiconductor layer configured to emit light, and a second-type semiconductor layer on the multiple quantum well (MQW) layer;
- a first substrate comprising a deposited material on the first-type semiconductor layer having a first surface, an opposing second surface and a first area greater than an area of the first-type semiconductor layer;
- a second substrate on the first substrate configured for attachment to a LED substrate having a second area less than the first area, wherein the second substrate comprises a semiconductor material;
- a seed layer on the first surface of the first substrate configured to assist deposition of the first substrate on the first-type semiconductor layer;
- and
- a reflector layer on the seed layer;
- the first substrate and the second substrate forming a stepped protective structure configured to protect the epitaxial stack during attachment of the light emitting diode die to the LED substrate.
4 more elements
A light emitting diode die comprising:
- an epitaxial stack comprising a first-type semiconductor layer, a multiple quantum well (MQW) layer on the first-type semiconductor layer configured to emit light, and a second-type semiconductor layer on the multiple quantum well (MQW) layer;
- a first substrate comprising a deposited material on the first-type semiconductor layer having a first surface, an opposing second surface and a first area greater than an area of the first-type semiconductor layer;
- a second substrate on the first substrate configured for attachment to a LED substrate having a second area less than the first area, wherein the second substrate comprises Si;
- a seed layer on the first surface of the first substrate configured to assist deposition of the first substrate on the first-type semiconductor layer;
- and
- a reflector layer on the seed layer;
- the first substrate and the second substrate forming a stepped protective structure configured to protect the epitaxial stack during attachment of the light emitting diode die to the LED substrate.
4 more elements
A light emitting diode die comprising:
- an epitaxial stack comprising a p-type semiconductor layer, a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light, and an n-type semiconductor layer on the multiple quantum well (MQW) layer;
- a reflector layer on the p-type semiconductor layer;
- a seed layer on the reflector layer;
- a first substrate comprising a deposited semiconductor material on the seed layer having a first area greater than an area of the p-type semiconductor layer;
- a second substrate on the first substrate configured for attachment to a LED substrate having a second area, with the first area of the first substrate greater than the second area of the second substrate forming a stepped protective structure for protecting the epitaxial stack during attachment of the light emitting diode die to the LED substrate.
2 more elements
Dependencies are inferred from the claim text.