Light emitting device and method of manufacturing the same

A light emitting device comprising:

• a barrier rib structure having an opening formed therein;
• and
• a light emitting structure on the barrier rib structure,
• wherein the light emitting structure comprises a first semiconductor layer, a dislocation blocking layer, a second semiconductor layer, a third semiconductor layer, an active layer, and a fourth semiconductor layer sequentially stacked along a vertical direction on the barrier rib structure,
• wherein a plurality of recesses are formed in the first semiconductor layer, and
• wherein at least one void is located within at least one of the plurality of recesses,
• wherein the plurality of recesses comprises a first recess and the at least one void comprises a first void,
• wherein a distance between an upper surface of the first void and a lower surface of the first semiconductor layer is less than a thickness of the first semiconductor layer, and
• wherein the second semiconductor layer extends into the first recess to the upper surface of the first void.

A light emitting device comprising:

• a silicon barrier rib structure having an opening formed therein;
• and
• a light emitting structure on the silicon barrier rib structure,
• wherein the light emitting structure comprises a first semiconductor layer, a silicon nitride layer, a second semiconductor layer, a third semiconductor layer, an active layer, and a fourth semiconductor layer sequentially stacked on the silicon barrier rib structure,
• wherein a plurality of recesses are formed in the first semiconductor layer, and
• wherein at least one void is located in at least one of the plurality of recesses, and
• wherein the at least one of the plurality of recesses comprises a first recess, and the at least one void comprises a first void,
• wherein a distance between an upper surface of the first void and a lower surface of the first semiconductor layer is less than a thickness of the first semiconductor layer, and
• wherein the second semiconductor layer extends into the first recess to the upper surface of the at least one void.