Method of manufacturing chip-on-wafer for micro led display
AssigneeWavelord Co., Ltd
InventorsJuneo SONG, Hyeong Seon YUN, Young Hun HAN, Ji Hyung MOON
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Abstract
The present invention relates to a method of manufacturing a chip-on-wafer for a micro LED display, the method, using a chip-on-wafer method to manufacture a lateral chip, a flip chip, and a vertical chip for a micro LED display, etching an undoped semiconductor region (uGaN) and an n-type semiconductor region (nGaN) of a semiconductor layer without damaging the chips to allow thickness of the semiconductor layer to be significantly reduced.
Claims6
A method of manufacturing a chip-on-wafer for a micro-light-emitting diode (LED) display, the method comprising:
- a growth operation of epitaxially growing a semiconductor layer on an initial growth substrate;
- an electrode formation operation of forming an ohmic contact electrode on the semiconductor layer;
- an adhesion operation of bonding the ohmic contact electrode to an intermediate temporary substrate through an adhesive layer;
- an exposure operation of exposing one surface of the semiconductor layer by removing the initial growth substrate;
- an etching operation of etching the exposed one surface of the semiconductor layer to reduce a thickness of the semiconductor layer;
- a bonding operation of bonding the etched one surface of the semiconductor layer to a final support substrate;
- and
- a removal operation of removing the intermediate temporary substrate and the adhesive layer.
A method of manufacturing a chip-on-wafer for a micro-light-emitting diode (LED) display, the method comprising:
- a growth operation of epitaxially growing a semiconductor layer on an initial growth substrate;
- an electrode formation operation of forming an ohmic contact electrode on the semiconductor layer;
- a bonding operation of bonding the ohmic contact electrode to a final support substrate;
- an exposure operation of exposing one surface of the semiconductor layer by removing the initial growth substrate;
- and
- an etching operation of etching the exposed one surface of the semiconductor layer to reduce a thickness of the semiconductor layer.
Dependencies are inferred from the claim text.