US 7,893,449 B2 · Gallium nitride based compound semiconductor light-emitting device having high emission efficiency and method of manufacturing the same

Abstract

The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.

Claims11

Dependent claims

A gallium nitride based compound semiconductor light-emitting device including:

a gallium nitride based compound semiconductor device including a p-type semiconductor layer;
and
a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer,
wherein a dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than a bulk dopant concentration of the transparent conductive oxide film, and
wherein the dopant concentration of the transparent conductive oxide film is 15 at % or more in the region that is 2 nm or less away from the interface and the dopant concentration is 5 to 10 at % in the region that is 2 nm or more away from the interface.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

12/097,054Filed 13 Dec 2006

Priority

JP 2005-36028814 Dec 2005

Published

US 2009/0278158 A112 Nov 2009

Granted

22 Feb 2011

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10H 20/8215
Bodies: characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
H10H 20/017
Of bodies, e.g. forming semiconductor layers: etching
H10H 20/032
Manufacture or treatment: of electrodes
H10H 20/833
Characterised by their material: transparent materials

Gallium nitride based compound semiconductor light-emitting device having high emission efficiency and method of manufacturing the same

Life of this patent

Gallium nitride based compound semiconductor light-emitting device having high emission efficiency and method of manufacturing the same

Life of this patent

Abstract

Claims11