H10H 20/01335
The light-emitting regions comprising nitride materials
Official title: {the light-emitting regions comprising nitride materials}
H10H20/01335 (The light-emitting regions comprising nitride materials) appears on 3,252 US grants and 3,964 published applications in this corpus.
Search patents in H10H- Granted patents
- 3,252
- Published applications
- 3,964
- Assignees
- 804
- Inventors
- 4,717
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 5 | 0 |
| 1992 | 2 | 0 |
| 1993 | 7 | 0 |
| 1994 | 4 | 0 |
| 1995 | 6 | 0 |
| 1996 | 5 | 0 |
| 1997 | 18 | 0 |
| 1998 | 29 | 0 |
| 1999 | 36 | 0 |
| 2000 | 46 | 0 |
| 2001 | 47 | 31 |
| 2002 | 58 | 84 |
| 2003 | 72 | 75 |
| 2004 | 55 | 65 |
| 2005 | 62 | 92 |
| 2006 | 62 | 96 |
| 2007 | 43 | 114 |
| 2008 | 39 | 104 |
| 2009 | 64 | 125 |
| 2010 | 98 | 161 |
| 2011 | 109 | 196 |
| 2012 | 147 | 262 |
| 2013 | 169 | 198 |
| 2014 | 227 | 258 |
| 2015 | 226 | 224 |
| 2016 | 217 | 205 |
| 2017 | 179 | 189 |
| 2018 | 147 | 190 |
| 2019 | 212 | 202 |
| 2020 | 175 | 174 |
| 2021 | 130 | 145 |
| 2022 | 93 | 183 |
| 2023 | 100 | 193 |
| 2024 | 110 | 196 |
| 2025 | 133 | 118 |
| 2026 | 114 | 84 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate processing for GaN growth6 Oct 2026US 12,757,524 B2APPLIED Materials.Inc.
- High electron mobility transistor epitaxial structure that includes carbon doped nitride layers6 Oct 2026US 12,757,526 B2GlobalWafers Co., Ltd.
- Light emitting element and production method therefor29 Sep 2026US 12,751,128 B2Toyoda Gosei Co., Ltd.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Method for manufacturing light-emitting device15 Sep 2026US 12,740,185 B2Nichia Corporation
- Display chip and display apparatus and manufacturing methods thereof8 Oct 2026US 2026/0314137 A1Beijing Zitiao Network Technology Co., Ltd.
- Nitride semiconductor element and method of manufacturing nitride semiconductor element24 Sep 2026US 2026/0293378 A1Nichia Corporation
- Optoelectronic substrate and light source and method of manufacturing thereof24 Sep 2026US 2026/0293379 A1Ingantec Corporation
- Method of manufacturing chip-on-wafer for micro led display17 Sep 2026US 2026/0282602 A1Wavelord Co., Ltd
- Thin quantum barrier with high aluminum content for ultraviolet light emitters17 Sep 2026US 2026/0282604 A1The Regents of the University of California
Most cited
By later US patents
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Separation of thin films from transparent substrates by selective optical processing783US 6,071,795 AThe Regents of the University of California · 2000
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Vertical geometry light emitting diode with group III nitride active layer and extended lifetime664US 5,523,589 ACree Research, Inc. · 1996
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000