H10D 89/211
Design considerations for internal polarisation
Official title: {Design considerations for internal polarisation (integrated injection logic H10D84/65)}
H10D89/211 (Design considerations for internal polarisation) appears on 625 US grants and 321 published applications in this corpus.
Search patents in H10D- Granted patents
- 625
- Published applications
- 321
- Assignees
- 176
- Inventors
- 935
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 9 | 0 |
| 1978 | 3 | 0 |
| 1979 | 7 | 0 |
| 1980 | 10 | 0 |
| 1981 | 10 | 0 |
| 1982 | 5 | 0 |
| 1983 | 8 | 0 |
| 1984 | 10 | 0 |
| 1985 | 8 | 0 |
| 1986 | 5 | 0 |
| 1987 | 10 | 0 |
| 1988 | 5 | 0 |
| 1989 | 11 | 0 |
| 1990 | 8 | 0 |
| 1991 | 19 | 0 |
| 1992 | 8 | 0 |
| 1993 | 15 | 0 |
| 1994 | 22 | 0 |
| 1995 | 30 | 0 |
| 1996 | 16 | 0 |
| 1997 | 22 | 0 |
| 1998 | 30 | 0 |
| 1999 | 22 | 0 |
| 2000 | 15 | 0 |
| 2001 | 21 | 9 |
| 2002 | 24 | 20 |
| 2003 | 19 | 28 |
| 2004 | 17 | 20 |
| 2005 | 18 | 24 |
| 2006 | 18 | 32 |
| 2007 | 19 | 16 |
| 2008 | 19 | 15 |
| 2009 | 11 | 8 |
| 2010 | 9 | 15 |
| 2011 | 14 | 6 |
| 2012 | 7 | 11 |
| 2013 | 8 | 8 |
| 2014 | 18 | 13 |
| 2015 | 9 | 5 |
| 2016 | 5 | 9 |
| 2017 | 14 | 14 |
| 2018 | 10 | 15 |
| 2019 | 9 | 7 |
| 2020 | 12 | 4 |
| 2021 | 3 | 7 |
| 2022 | 5 | 10 |
| 2023 | 5 | 7 |
| 2024 | 10 | 6 |
| 2025 | 6 | 6 |
| 2026 | 3 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Stacked electronic devices having independent gates24 Mar 2026US 12,588,273 B2International Business Machines Corporation
- Capacitor and method for forming the same24 Mar 2026US 12,588,295 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor cell and active area arrangement30 Dec 2025US 12,513,977 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Power semiconductor device capable of controlling slope of current and voltage during dynamic switching16 Dec 2025US 12,501,636 B2Trinno Technology Co., Ltd.
- Drain extended transistor with dynamically biased field plate3 Sep 2026US 2026/0262296 A1
- Semiconductor chip25 Jun 2026US 2026/0182044 A1Sumitomo Electric Industries, Ltd.
- Capacitor and method for forming the same18 Jun 2026US 2026/0173542 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device4 Jun 2026US 2026/0156857 A1NTT, Inc.
- Semiconductor cell and active area arrangement16 Apr 2026US 2026/0107560 A1
Most cited
By later US patents
- Method of fabricating a one transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region297US 6,913,964 B2Monolithic System Technology, Inc. · 2005
- One-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region234US 6,661,042 B2Monolithic System Technology, Inc. · 2003
- Semiconductor integrated circuit device having power reduction mechanism169US 5,583,457 AHitachi, Ltd. · 1996
- Shared body and diffusion contact structure and method for fabricating same169US 6,429,477 B1International Business Machines Corporation · 2002
- Switched substrate bias for logic circuits160US 5,610,533 AMitsubishi Denki Kabushiki Kaisha · 1997