H10D 89/311
In bipolar devices
Official title: {in bipolar devices}
H10D89/311 (In bipolar devices) appears on 27 US grants and 4 published applications in this corpus.
Search patents in H10D- Granted patents
- 27
- Published applications
- 4
- Assignees
- 17
- Inventors
- 50
- Latest grant
- 10 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 2 |
| 2019 | 3 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device10 Oct 2023US 11,784,245 B2Murata Manufacturing Co., Ltd.
- Electrostatic discharge devices15 Oct 2019US 10,446,537 B2Texas Instruments Incorporated
- Semiconductor module8 Oct 2019US 10,439,606 B2Fuji Electric Co., Ltd.
- Semiconductor device25 Jun 2019US 10,332,806 B2Nuvoton Technology Corporation
- Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions6 Feb 2001US 6,184,565 B2Harris Corporation
- Semiconductor device18 Mar 2021US 2021/0083080 A1Murata Manufacturing Co., Ltd.
- Semiconductor module21 Feb 2019US 2019/0058468 A1Fuji Electric Co., Ltd.
- Electrostatic discharge devices20 Dec 2018US 2018/0366460 A1Texas Instruments Incorporated
- Semiconductor device31 May 2018US 2018/0151437 A1Nuvoton Technology Corporation
Most cited
By later US patents
- Integrated circuit with at least three ground pads29US 4,403,240 AHitachi, Ltd. · 1983
- High voltage integrated circuit, and high voltage level shift unit used for the same20US 5,736,774 AFuji Electric Co., Ltd. · 1998
- Integrated circuit overvoltage protection circuit19US 4,005,342 AMotorola, Inc. · 1977
- Monolithic autobiased resistor structure and application thereof to interface circuits16US 4,578,695 AInternational Business Machines Corporation · 1986
- Integrated circuit and method for biasing an epitaxial layer14US 4,577,211 AMotorola, Inc. · 1986