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US 4,403,240 AGranted
Integrated circuit with at least three ground pads
AssigneeHitachi, Ltd.
InventorsKunio Seki, Ritsuji Takeshita
Life of this patent
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AssigneeHitachi, Ltd.
InventorsKunio Seki, Ritsuji Takeshita
Estimating the term…
A semiconductor integrated circuit device for an amplifier circuit including a semiconductor substrate in which an audio amplifier circuit is formed in an integrated circuit form, at least one first wire bonding pad which is formed on said semiconductor substrate to ground said audio amplifier circuit, and an externally connecting terminal which is provided being separated away from said semiconductor substrate and which is electrically connected to said first wire bonding pad via a metal wire, wherein the improvement comprises a wire bonding pad for the substrate which is formed on said semiconductor substrate being separated away from said first wire bonding pad, and which grounds said semiconductor substrate, and a metallic connector wire which electrically connects said wire bonding pad for the substrate to said externally connecting terminal.
In a semiconductor integrated circuit device for audio amplifier circuits including a semiconductor substrate, first and second semiconductor island regions formed on said semiconductor substrate, an input amplifier circuit formed in said first semiconductor island region, an output amplifier circuit formed in said second semiconductor island region, a first wire bonding pad which is formed on said semiconductor substrate for grounding said input amplifier circuit and a first externally connecting terminal which is provided being separated away from said semiconductor substrate and which is electrically connected to said first wire bonding pad via a first metal wire to ground said input amplifier circuit, the improvement comprising a second wire bonding pad which is formed on said semiconductor substrate being separated away from said first wire bonding pad for grounding said output amplifier circuit, a second externally connecting terminal which is provided being separated away from said semiconductor substrate and which is electrically connected to said second wire bonding pad via a second metal wire to ground said output amplifier circuit, a third wire bonding pad which is formed in the vicinity of the second semiconductor island region on said semiconductor substrate being separated away from said first and second wire bonding pads for grounding said semiconductor substrate, and a third metal wire which electrically connects said third wire bonding pad to said second externally connecting terminal to ground said semiconductor substrate.
A semiconductor integrated circuit device which comprises a semiconductor substrate, first and second semiconductor island regions formed on said semiconductor substrate, a first circuit element formed in said first semiconductor island region, a second circuit element formed in said second semiconductor island region, a first wire bonding pad formed on said semiconductor substrate and electrically connected to said first circuit element to provide a predetermined reference potential to said first circuit element, a second wire bonding pad formed on said semiconductor substrate and being electrically connected to said second circuit element to provide said reference potential to said second circuit element, a third wire bonding pad formed on said semiconductor substrate to provide said reference potential to said semiconductor substrate, and a conductive layer formed on said semiconductor substrate and electrically connected to said third wire bonding pad and said semiconductor substrate.
A semiconductor integrated circuit device which comprises a semiconductor substrate, first and second semiconductor island regions formed on said semiconductor substrate and separated away from each other by a semiconductor isolation region contacted with said semiconductor substrate, a first circuit element formed in said first semiconductor island region, a second circuit element formed in said second semiconductor island region, a first bonding pad formed on said semiconductor substrate and electrically connected to said first circuit element to provide a predetermined reference potential to said first circuit element, a second bonding pad formed on said semiconductor substrate and electrically connected to said second circuit element to provide said reference potential to said second circuit element, a third bonding pad formed on said semiconductor substrate to provide said reference potential to said semiconductor substrate, and a conductive layer formed on said semiconductor substrate and contacted with said third bonding pad, with a first portion of said semiconductor isolation region in the vicinity of said first circuit element and with a second portion of said semiconductor isolation region in the vicinity of said second circuit element.
A semiconductor integrated circuit device which comprises a semiconductor substrate, first and second semiconductor island regions formed on said semiconductor substrate and separated away from each other by a semiconductor isolation region contacted with said semiconductor substrate, a first amplifier circuit formed in said first semiconductor island region, a second amplifier circuit formed in said second semiconductor island region, a first connecting pad which is formed on said semiconductor substrate for grounding said first amplifier circuit, a first externally connecting terminal which is provided being separated away from said semiconductor substrate and which is electrically connected to said first connecting pad to ground the first amplifier circuit, a second connecting pad which is formed on said semiconductor substrate being separated away from said first connecting pad for grounding said second amplifier circuit, a second externally connecting terminal which is provided being separated away from said semiconductor substrate and which is electrically connected to said second connecting pad to ground said second amplifier circuit, a third connecting pad which is formed on said semiconductor substrate being separated away from said first and second connecting pads, and a conductive layer formed on said semiconductor substrate and contacted with said third connecting pad, and which is also contacted with a first portion of said semiconductor isolation region in the vicinity of said first semiconductor island region and with a second portion of said semiconductor isolation region in the vicinity of said second semiconductor island region, and wherein said third connecting pad is electrically contacted to said second externally connecting terminal to ground said semiconductor substrate.
A semiconductor integrated circuit device which comprises a semiconductor substrate which is of a first conductivity type and has one main surface, a semiconductor layer which is of a second conductivity type opposite to said first conductivity type and is provided on said main surface, a semiconductor isolation region of said first conductivity type which is formed in said semiconductor layer and which reaches to said main surface to form first and second island portions of said semiconductor layer, a plurality of semiconductor regions for a first amplifier circuit which are of said first conductivity type and are formed in said first island portion, a plurality of semiconductor regions for a second amplifier circuit which are of said first conductivity type and are formed in said second island portion, an insulating layer which is provided on said semiconductor isolation region and which includes first and second insulating layer portions formed on said first and second semiconductor island regions, respectively, a first connecting pad which is formed on the first insulating layer portion of said insulating layer and which is electrically connected to at least one of said semiconductor regions for said first amplifier circuit to provide a predetermined reference potential to said first amplifier circuit, a second connecting pad which is formed on the second insulating layer portion of said insulating layer spaced from said first portion and which is electrically connected to at least one of said semiconductor regions for said second amplifier circuit to provide said predetermined reference potential to said second amplifier circuit, a third connecting pad which is formed on a part of said semiconductor isolation region adjacent to said one of said semiconductor regions for said first amplifier circuit and which is electrically contacted to said part of said semiconductor isolation region to provide said predetermined reference potential to said semiconductor isolation region, and a conductive layer formed on said insulating layer and which is electrically contacted to said third connecting pad and another part of said semiconductor isolation region adjacent to said one of said semiconductor regions for said second amplifier circuit and which is electrically contacted to said other part of said semiconductor isolation region.
Dependencies are inferred from the claim text.