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US 10,332,806 B2Granted
Semiconductor device
AssigneeNuvoton Technology Corporation
InventorWen-Ying Wen
Life of this patent
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Abstract
Provided is a semiconductor device including a substrate having a P-type conductivity, a buried layer having an N-type conductivity, an NPN bipolar junction transistor (BJT), and a first well region having the P-type conductivity. The buried layer is located on the substrate. The NPN BJT is located on the buried layer. The first well region is located between the buried layer and the NPN BJT. The NPN BJT is separated from the buried layer by the first well region.
Claims19
A semiconductor device, comprising:
- a substrate having a first conductivity;
- a buried layer having a second conductivity, located on the substrate;
- a first well region having the first conductivity, located on the buried layer;
- a second well region having the second conductivity, located in the first well region, wherein the second well region is in contact with the first well region:
- a body region having the first conductivity, located in the second well region;
- a first doped region having the second conductivity, located in the second well region;
- a second doped region having the second conductivity, located in the body region, wherein the first well region surrounds the second well region to separate the second well region from the buried layer;
- and
- wherein the second conductivity is different from the first conductivity.
6 more elements
A semiconductor device, comprising:
- a substrate having a P-type conductivity;
- a buried layer having an N-type conductivity, located on the substrate;
- an NPN bipolar junction transistor, located on the buried layer, the NPN bipolar junction transistor having a collector, an emitter, and a base, wherein a doping concentration of the emitter is more than a doping concentration of the base, and the doping concentration of the base is more than a doping concentration of the collector;
- and
- a first well region having the P-type conductivity, located between the buried layer and the NPN bipolar junction transistor, wherein the NPN bipolar junction transistor is separated from the buried layer by the first well region, and the collector is in contact with the first well region.
2 more elements
Dependencies are inferred from the claim text.