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AssigneeHarris Corporation
InventorJames D. Beasom
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The reduction in breakdown voltage of a device which contains adjoining regions of relatively high and low impurity concentrations within a dielectrically isolated island of an integrated circuit architecture is effectively countered by biasing the material surrounding the island, such as a support polysilicon substrate or the fill material of a isolated trench, at a prescribed bias voltage that is insufficient to cause the avalanche-generation of electron-hole pairs in the vicinity of the relatively high-to-low impurity concentration junction between the buried layer and the island. Where a plurality of islands are supported in and surrounded by a common substrate material of an overall integrated circuit architecture, the prescribed bias voltage may be set at a value that is no more positive than half the difference between the most positive and the most negative of the bias voltages that are applied to the integrated circuit. Where respective islands do not share a common (continuously connected) substrate, the surrounding material of each island is biased at a voltage sufficiently close to the island voltage as to prevent avalanche-generation of carrier pairs; this voltage may be the same bias voltage applied to the island material itself.
For use with a semiconductor device comprising a semiconductor substrate containing a semiconductor island region of a first conductivity type having sidewalls which abut a first side of dielectric material that prescribes said island region, a first semiconductor region having said first conductivity type and an impurity concentration different from that of said island region, said first semiconductor region being disposed in said island region so as to define a relatively high-to-low impurity concentration junction between said semiconductor region and said island region, said relatively high-to-low impurity concentration junction corresponding to a readily measurable transition of doping concentration within said island region, as opposed to a graded profile from high-to-low doping, such as a Gaussian distribution from a top surface of said island region toward the bottom of said island region or a low-to-high retrograde profile measured from said top surface of said island region, said relatively high-to-low impurity concentration junction intersecting said dielectric material, and a second semiconductor region of a second conductivity type disposed in said island region so as to define a PN junction between said second semiconductor region and said island region, said island region and said second semiconductor region being coupled to receive respective bias voltages which reverse bias said PN junction, a method of suppressing a reduction of breakdown voltage due to a field acting upon said relatively high-to-low impurity concentration junction, said method comprising the steps of:
For use with a semiconductor device comprising a semiconductor layer of a first conductivity type coupled to receive a first bias voltage and having a first semiconductor region of a second conductivity type disposed in a first portion thereof forming a PN junction with said semiconductor layer, said first semiconductor region being coupled to a second bias voltage which reverse biases said PN junction, said semiconductor layer further having a second semiconductor region of said first conductivity type disposed in a second portion thereof, spaced apart from said PN junction, and having an impurity concentration different from that of said semiconductor layer, so as to define a relatively high-to-low impurity concentration junction between said semiconductor layer and said second semiconductor region, said relatively high-to-low impurity concentration junction corresponding to a readily measurable transition of doping concentration within said semiconductor layer, as opposed to a graded profile from high-to-low doping such as a Gaussian distribution from a top surface of said semiconductor layer toward the bottom of said semiconductor layer or a low-to-high retrograde profile measured from said top surface of said semiconductor layer, a trench surrounding said first portion of said semiconductor layer, and containing dielectric material along sidewalls of said trench, such that said relatively high-to-low impurity concentration junction intersects dielectric material in said trench, a method of suppressing a reduction of breakdown voltage due to a field acting upon said relatively high-to-low impurity concentration junction, said method comprising the steps of:
For use with a semiconductor device comprising a semiconductor substrate containing a semiconductor island region of a first conductivity type having sidewalls which abut a first side of dielectric material that prescribes said island region, a first semiconductor region of said first conductivity type, and having an impurity concentration different from that of said island region, disposed in said island region and defining a relatively high-to-low impurity concentration junction between said semiconductor region and said island region, said relatively high-to-low impurity concentration junction intersecting said dielectric material, said relatively high-to-low impurity concentration junction corresponding to a readily measurable transition of doping concentration within said island region, as opposed to a graded profile from high-to-low doping such as a Gaussian distribution from a top surface of said island region, and a second semiconductor region of a second conductivity type disposed in said island region and defining a PN junction between said second semiconductor region and said island region, said island region and said second semiconductor region being coupled to receive respective bias voltages which reverse bias said PN junction, a method of suppressing a reduction of breakdown voltage due to a field acting upon said relatively high-to-low impurity concentration junction, said method comprising the steps of:
Dependencies are inferred from the claim text.