Electrostatic discharge devices
AssigneeTexas Instruments Incorporated
InventorsGianluca Boselli, Muhammad Yusuf Ali
Life of this patent
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Abstract
In accordance with at least one embodiment, an ESD device comprises: a semiconductor; a pad; a ground rail; a p-well formed in the semiconductor; a first p-type region formed in the p-well and electrically coupled to the ground rail; a first n-type region formed in the p-well and electrically coupled to the pad; a second n-type region formed in the p-well and electrically coupled to the ground rail; an n-well formed in the semiconductor; a first n-type region formed in the n-well; a first p-type region formed in the n-well and electrically coupled to the pad; and a second p-type region formed in the n-well and electrically coupled to the first n-type region formed in the n-well.
Claims19
An electrostatic discharge device comprising:
- a semiconductor;
- a pad;
- a ground rail;
- a p-well formed in the semiconductor;
- a first p-type region formed in the p-well and electrically coupled to the ground rail;
- a first n-type region formed in the p-well and electrically coupled to the pad;
- a second n-type region formed in the p-well and electrically coupled to the ground rail;
- an n-well formed in the semiconductor;
- a first n-type region formed in the n-well;
- a first p-type region formed in the n-well and electrically coupled to the pad;
- and
- a second p-type region formed in the n-well and electrically coupled to the first n-type region formed in the n-well.
A process comprising:
- forming a ground rail on a semiconductor;
- forming a pad on the semiconductor;
- forming a p-well in the semiconductor;
- forming a first p-type region in the p-well;
- coupling the first p-type region formed in the p-well to the ground rail;
- forming a first n-type region in the p-well;
- coupling the first n-type region formed in the p-well to the pad;
- forming a second n-type region in the p-well;
- coupling the second n-type region formed in the p-well to the ground rail;
- forming an n-well in the semiconductor;
- forming a first n-type region in the n-well;
- forming a first p-type region in the n-well;
- coupling the first p-type region formed in the n-well to the pad;
- forming a second p-type region in the n-well;
- and
- coupling the second p-type region formed in the n-well to the first n-type region formed in the n-well.
Dependencies are inferred from the claim text.